AP70N02DF - аналоги и даташиты транзистора

 

AP70N02DF - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP70N02DF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 57 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 49 ns
   Cossⓘ - Выходная емкость: 407 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: PDFN3X3-8L
 

 Аналог (замена) для AP70N02DF

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP70N02DF Datasheet (PDF)

 ..1. Size:1310K  cn apm
 ap70n02df.pdf pdf_icon

AP70N02DF

AP70N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP70N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =70A DS DR

 7.1. Size:1293K  cn apm
 ap70n02nf.pdf pdf_icon

AP70N02DF

AP70N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP70N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =70A DS DR

 8.1. Size:1530K  cn apm
 ap70n04nf.pdf pdf_icon

AP70N02DF

AP70N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP70N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =70 A DS DR

 8.2. Size:4048K  cn apm
 ap70n03df.pdf pdf_icon

AP70N02DF

AP70N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP70N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =70A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP5N10BSI , AP5N10MI , AP5N10SI , AP6N10MI , AP6N12MI , AP6N40D , AP6P03SI , AP6P06MI , AON6414A , AP70N02NF , AP70N03NF , AP70N04NF , AP70N06HD , AP70N12D , AP70N12NF , AP70P02D , AP70P03D .

 

 
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