Справочник MOSFET. 2N7002A

 

2N7002A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2N7002A

Маркировка: WB

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.25 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 0.115 A

Выходная емкость (Cd): 23 pf

Сопротивление сток-исток открытого транзистора (Rds): 3.5 Ohm

Тип корпуса: SOT23

Аналог (замена) для 2N7002A

 

2N7002A Datasheet (PDF)

1.1. cmt2n7002ag.pdf Size:199K _update_mosfet

2N7002A
2N7002A

CMT2N7002AG SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor High Density Cell Design for Low RDS(ON) is produced using high cell density, DMOS technology. Voltage Controlled Small Signal Switch These products have been designed to minimize Rugged and Reliable on-state resistance while provide rugged, reliable, and High

1.2. t2n7002ak.pdf Size:591K _update_mosfet

2N7002A
2N7002A

T2N7002AK TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type T2N7002AK ○ High Speed Switching Applications • ESD protected gate • Low ON-resistance RDS(on) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(on) = 3.1 Ω (typ.) (@VGS = 5 V) RDS(on) = 3.2 Ω (typ.) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 1. Gate 2. Source Drai

 1.3. 2n7002a.pdf Size:147K _diodes

2N7002A
2N7002A

2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data N-Channel MOSFET Case: SOT-23 Low On-Resistance Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020D Low Input Capacitance Ter

1.4. 2n7002a.pdf Size:51K _kec

2N7002A
2N7002A

2N7002A SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES E L B L High density cell design for low RDS(ON). DIM MILLIMETERS Voltage controolled small signal switch. _ A + 2.93 0.20 B 1.30+0.20/-0.15 Rugged and reliable. C 1.30 MAX 2 3 High saturation current capablity. D 0.45+0.15/-0.05 E 2.40+0.3

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