AP4406B datasheet, аналоги, основные параметры
Наименование производителя: AP4406B 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 15.8 ns
Cossⓘ - Выходная емкость: 62 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
Тип корпуса: SOP8
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Аналог (замена) для AP4406B
- подборⓘ MOSFET транзистора по параметрам
AP4406B даташит
..1. Size:1957K cn apm
ap4406b.pdf 
AP4406B 30V N-Channel Enhancement Mode MOSFET Description The AP4406B uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =10A DS D R
8.1. Size:1400K cn apm
ap4406a.pdf 
AP4406A 30V N-Channel Enhancement Mode MOSFET Description The AP4406A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =12A DS D R
9.1. Size:155K ape
ap4409gep.pdf 
AP4409GEP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS -35V D Simple Drive Requirement RDS(ON) 8.2m G Fast Switching Characteristic ID -80A RoHS Compliant & Halogen-Free S Description AP4409 series are from Advanced Power innovat
9.2. Size:122K ape
ap4409gep-hf.pdf 
AP4409GEP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS -35V D Simple Drive Requirement RDS(ON) 8.2m G Fast Switching Characteristic ID -80A RoHS Compliant & Halogen-Free S Description AP4409 series are from Advanced Power innovated design and silicon process technology to achieve the lowe
9.3. Size:211K ape
ap4407i.pdf 
AP4407I-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description AP4407 series are from Advanced Power innovated design and silicon process technology to achieve the lowest
9.4. Size:182K ape
ap4409agem.pdf 
AP4409AGEM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -35V D D D Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic
9.5. Size:61K ape
ap4409agem-hf.pdf 
AP4409AGEM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -35V D D D Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5A G S S RoHS Compliant S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switch
9.6. Size:98K ape
ap4407gp-hf ap4407gs-hf.pdf 
AP4407GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge
9.7. Size:170K ape
ap4407gm.pdf 
AP4407GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET BVDSS -30V Simple Drive Requirement D D D RDS(ON) 14m Low On-resistance D ID -10.7A Fast Switching G RoHS Compliant & Halogen-Free S S SO-8 S D Description AP4407 series are from Advanced Pow
9.8. Size:218K ape
ap4407gp ap4407gs.pdf 
AP4407GS/P RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, D S TO-263(
9.9. Size:184K ape
ap4409gem.pdf 
AP4409GEM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -35V D D D Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device
9.10. Size:216K ape
ap4405gm.pdf 
AP4405GM RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Lower On-resistance D RDS(ON) 8.2m D Fast Switching Characteristic ID -14A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device de
9.11. Size:99K ape
ap4409ageh-hf.pdf 
AP4409AGEH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -35V D Lower On-resistance RDS(ON) 8m G Fast Switching Characteristic ID -85A RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching,
9.12. Size:94K ape
ap4407i-hf.pdf 
AP4407I-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz
9.13. Size:208K ape
ap4407gm-hf.pdf 
AP4407GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 14m D Fast Switching ID -10.7A G RoHS Compliant S S SO-8 S D Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized d
9.14. Size:55K ape
ap4409agm-hf.pdf 
AP4409AGM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D D Low On-resistance RDS(ON) 7.2m Fast Switching Characteristic ID -15A G S RoHS Compliant & Halogen-Free S SO-8 S D Description AP4409A series are from Advanced Power innovated design and silicon process technol
9.15. Size:71K ape
ap4407s-p.pdf 
AP4407S/P Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A G S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-26
9.19. Size:1552K cn apm
ap4409a.pdf 
AP4409A -30V P-Channel Enhancement Mode MOSFET Description The AP4409A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I = 14A DS D R
9.20. Size:2126K cn apm
ap4407a.pdf 
AP4407A 30V P-Channel Enhancement Mode MOSFET Description The AP4407A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID = -12A RDS(ON)
9.21. Size:1385K cn apm
ap4407b.pdf 
AP4407B 30V P-Channel Enhancement Mode MOSFET Description The AP4407B uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-11.3A DS D R
Другие IGBT... AP220N10MP, AP2222D, AP25G02NF, AP25G03GD, AP25G04GD, AP25N04D, AP25N04S, AP4406A, IRF1404, AP4407A, AP4407B, AP4409A, AP4435A, AP4435B, AP45P06D, AP45P06NF, AP4606C
