AP4409A - Даташиты. Аналоги. Основные параметры

AP4409A -30V P-Channel Enhancement Mode MOSFET Description The AP4409A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I = 14A DS D R

AP4409AGEM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -35V D D D Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic

AP4409AGEM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -35V D D D Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5A G S S RoHS Compliant S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switch

AP4409AGEH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -35V D Lower On-resistance RDS(ON) 8m G Fast Switching Characteristic ID -85A RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching,

AP4409AGM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D D Low On-resistance RDS(ON) 7.2m Fast Switching Characteristic ID -15A G S RoHS Compliant & Halogen-Free S SO-8 S D Description AP4409A series are from Advanced Power innovated design and silicon process technol