AP4435B datasheet, подбор замены

 ..1. Size:1408K  cn apm
 ap4435b.pdf 

AP4435B -30V P-Channel Enhancement Mode MOSFET Description The AP4435B uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-9.3A DS D R

 8.1. Size:202K  ape
 ap4435gm-hf.pdf 

AP4435GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low On-resistance RDS(ON) 20m D Fast Switching Characteristic ID -9A G S RoHS Compliant S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 8.2. Size:214K  ape
 ap4435gh ap4435gj.pdf 

AP4435GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40A G S Description G The TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount applications and suited for low voltag

 8.3. Size:100K  ape
 ap4435gh-hf ap4435gj-hf.pdf 

AP4435GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,

 8.4. Size:54K  ape
 ap4435gm.pdf 

AP4435GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 20m D Fast Switching Characteristic ID -9A G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device d

 8.5. Size:95K  ape
 ap4435gyt-hf.pdf 

AP4435GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -11A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device des

 8.6. Size:2830K  allpower
 ap4435.pdf 

 8.7. Size:631K  allpower
 ap4435c.pdf 

 8.8. Size:819K  cn vbsemi
 ap4435gj.pdf 

AP4435GJ www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.022 at VGS = - 4.5 V - 35 APPLICATIONS TO-251 Load Switch S Battery Switch G D P-Channel MOSFET G D S Top

 8.9. Size:2937K  cn vbsemi
 ap4435gm.pdf 

AP4435GM www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D

 8.10. Size:1538K  cn apm
 ap4435a.pdf 

AP4435A -30V P-Channel Enhancement Mode MOSFET Description The AP4435A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID = 9.5A RDS(ON)