AP65N03DF datasheet, аналоги, основные параметры

Наименование производителя: AP65N03DF  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 46 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 65 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 14.5 ns

Cossⓘ - Выходная емкость: 245 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm

Тип корпуса: PDFN3X3-8L

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Аналог (замена) для AP65N03DF

- подборⓘ MOSFET транзистора по параметрам

 

AP65N03DF даташит

 ..1. Size:1447K  cn apm
 ap65n03df.pdf pdf_icon

AP65N03DF

AP65N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP65N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =65A DS D R

 8.1. Size:1522K  cn apm
 ap65n04df.pdf pdf_icon

AP65N03DF

AP65N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP65N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =65A DS D R

 8.2. Size:1817K  cn apm
 ap65n06df.pdf pdf_icon

AP65N03DF

AP65N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06DF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R

 8.3. Size:1552K  cn apm
 ap65n06nf.pdf pdf_icon

AP65N03DF

AP65N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... ATM3415KPSA, ATM6402NSA, ATM7414NDH, ATM7N65ATE, ATM8205DNPD, ATM8205DNSG, ATM9435PPA, AP60P03D, IRF4905, AP65N04DF, AP65N06NF, AP68N04DF, AP68N04NF, AP6946A, AP6G03LI, AP260N12TLG1, AP30N10Y