AP30N10Y - Даташиты. Аналоги. Основные параметры

AP30N10Y 100V N-Channel Enhancement Mode MOSFET Description The AP30N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =30A DS D R

AP30N10D 100V N-Channel Enhancement Mode MOSFET Description The AP30N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I = 30A DS D R

AP30N15D 150V N-Channel Enhancement Mode MOSFET Description The AP30N15D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =30 A DS D R

AP30N30W Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Avalanche Test BVDSS 250V Simple Drive Requirement RDS(ON) 68m Lower On-resistance ID 36A G RoHS Compliant S Description AP30N30 from APEC provide the designer with the best combination of fas

AP30N30WI Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Avalanche Test BVDSS 250V Simple Drive Requirement RDS(ON) 68m Lower On-resistance ID 30A G RoHS Compliant S Description AP30N30 from APEC provide the designer with the best combination of f

AP30N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R

AP30N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP30N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R

AP30N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R

AP30N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP30N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =30 A DS D R

AP30N20P 200V N-Channel Enhancement Mode MOSFET Description The AP30N20P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gener

AP30N06D 60V N-Channel Enhancement Mode MOSFET Description The AP30N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30 A DS D R

AP30N02D 20V N-Channel Enhancement Mode MOSFET Description The AP30N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =30A DS D R = 11m @ V =4.5V DS(ON) GS Application