AP40N10P datasheet, подбор замены

 ..1. Size:1356K  cn apm
 ap40n10p.pdf 

AP40N10P 100V N-Channel Enhancement Mode MOSFET Description The AP40N10P uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R

 7.1. Size:982K  allpower
 ap40n100lk.pdf 

 7.2. Size:1689K  allpower
 ap40n100k.pdf 

 9.1. Size:94K  ape
 ap40n03gp-hf.pdf 

AP40N03GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A RoHS Compliant & Halogen-Free G TO-220 D S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 9.2. Size:95K  ape
 ap40n03gp.pdf 

AP40N03GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A G D TO-220 S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-r

 9.3. Size:126K  ape
 ap40n03gs.pdf 

AP40N03GS RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOS FET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A G D S TO-263 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-res

 9.4. Size:97K  ape
 ap40n03gh-hf ap40n03gj-hf.pdf 

AP40N03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOS FET Low Gate Charge BVDSS 30V D Simple Drive Requirement RDS(ON) 21m Fast Switching Characteristic ID 36A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S

 9.5. Size:643K  ncepower
 nceap40nd80ag.pdf 

NCEAP40ND80AG http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND80AG uses Super Trench technology that is V =40V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =4.7m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R p

 9.6. Size:693K  ncepower
 nceap40nd40g.pdf 

http //www.ncepower.com NCEAP40ND40G NCE Automotive N-Channel Super Trench Power MOSFET General Features Description V =40V,I =43A DS D The NCEAP40ND40G uses Super Trench technology that is R =8.2m (typical) @ V =10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =10.4m (typical) @ V =4.5V DS(ON) GS switching performance. Both conduction and swi

 9.7. Size:676K  ncepower
 nceap40nd80g.pdf 

http //www.ncepower.com NCEAP40ND80G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND80G uses Super Trench technology that is V =40V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =4.3m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =5.5m (typical) @ V =4.5V DS(

 9.8. Size:721K  ncepower
 nceap40nd40ag.pdf 

NCEAP40ND40AG http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND40AG uses Super Trench technology that is V =40V,I =43A DS D uniquely optimized to provide the most efficient high frequency R =9.3m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses Excellent gate charg

 9.9. Size:727K  ncepower
 nceap40nd60ag.pdf 

NCEAP40ND60AG http //www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND60AG uses Super Trench technology that is V =40V,I =65A DS D uniquely optimized to provide the most efficient high frequency R =8.3m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses Excellent gate charge x R produ

 9.10. Size:696K  allpower
 ap40n06k.pdf 

 9.11. Size:831K  cn vbsemi
 ap40n03gp.pdf 

AP40N03GP www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.010 at VGS = 10 V 55 30 25 nC 0.018 at VGS = 4.5 V 45 D TO-220AB G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise note

 9.12. Size:2811K  cn apm
 ap40n20mp.pdf 

AP40N20MP 200V N-Channel Enhancement Mode MOSFET Description The AP40N20MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. G

 9.13. Size:1423K  cn apm
 ap40n20p ap40n20t.pdf 

AP40N20PIT 200V N-Channel Enhancement Mode MOSFET Description The AP40N20P/T is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

 9.14. Size:1155K  cn apm
 ap40n03s.pdf 

AP40N03S 30V N-Channel Enhancement Mode MOSFET Description The AP40N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =40 A DS D R

 9.15. Size:1861K  cn apm
 ap40n02d.pdf 

AP40N02D 20V N-Channel Enhancement Mode MOSFET Description The AP40N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =40 A DS D R