AP40N10P - Даташиты. Аналоги. Основные параметры

AP40N10P 100V N-Channel Enhancement Mode MOSFET Description The AP40N10P uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS DR

AP40N03GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A RoHS Compliant & Halogen-FreeGTO-220DSDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

AP40N03GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40AGD TO-220SDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-r

AP40N03GSRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOS FET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40AGDS TO-263DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-res

AP40N03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOS FET Low Gate Charge BVDSS 30VD Simple Drive Requirement RDS(ON) 21m Fast Switching Characteristic ID 36AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,S

NCEAP40ND80AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80AG uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.7m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R p

http://www.ncepower.comNCEAP40ND40GNCE Automotive N-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =40V,I =43ADS DThe NCEAP40ND40G uses Super Trench technology that isR =8.2m (typical) @ V =10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =10.4m (typical) @ V =4.5VDS(ON) GSswitching performance. Both conduction and swi

http://www.ncepower.com NCEAP40ND80GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80G uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =5.5m (typical) @ V =4.5VDS(

NCEAP40ND40AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND40AG uses Super Trench technology that is V =40V,I =43ADS Duniquely optimized to provide the most efficient high frequency R =9.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excellent gate charg

NCEAP40ND60AGhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND60AG uses Super Trench technology that is V =40V,I =65ADS Duniquely optimized to provide the most efficient high frequency R =8.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excellent gate charge x R produ

AP40N03GPwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.010 at VGS = 10 V 5530 25 nC0.018 at VGS = 4.5 V 45DTO-220AB GSG D SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise note

AP40N20MP 200V N-Channel Enhancement Mode MOSFET Description The AP40N20MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. G

AP40N20PIT 200V N-Channel Enhancement Mode MOSFET Description The AP40N20P/T is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

AP40N03S 30V N-Channel Enhancement Mode MOSFET Description The AP40N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =40 A DS DR

AP40N02D 20V N-Channel Enhancement Mode MOSFET Description The AP40N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =40 A DS DR