AP60N03D - Даташиты. Аналоги. Основные параметры

AP60N03D 30V N-Channel Enhancement Mode MOSFET Description The AP60N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60A DS D R

AP60N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP60N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60A DS D R

AP60N03GS/P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55A G S Description The Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,

AP60N03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching Characteristic RDS(ON) 13.5m Simple Drive Requirement ID 55A G RoHS Compliant & Halogen-Free S Description AP60N03 series are from Advanced Power innovated design and G silicon process technology to achieve the l

AP60N03GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55A G RoHS Compliant S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized d

AP60N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP60N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60A DS D R

AP60N03P 30V N-Channel Enhancement Mode MOSFET Description The AP60N03P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60 A DS D R

AP60N03Y 30V N-Channel Enhancement Mode MOSFET Description The AP60N03Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =60A DS D R