AP60N06F datasheet, подбор замены

 ..1. Size:1477K  cn apm
 ap60n06f.pdf 

AP60N06F 60V N-Channel Enhancement Mode MOSFET Description The AP60N06F uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =60A DS D R

 8.1. Size:72K  ape
 ap60n03gs.pdf 

AP60N03GS/P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55A G S Description The Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,

 8.2. Size:162K  ape
 ap60n03gp.pdf 

AP60N03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching Characteristic RDS(ON) 13.5m Simple Drive Requirement ID 55A G RoHS Compliant & Halogen-Free S Description AP60N03 series are from Advanced Power innovated design and G silicon process technology to achieve the l

 8.3. Size:61K  ape
 ap60n03gh ap60n03gj.pdf 

AP60N03GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55A G RoHS Compliant S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized d

 8.4. Size:1507K  allpower
 ap60n04q.pdf 

 8.5. Size:1352K  cn apm
 ap60n02df.pdf 

AP60N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 8.6. Size:1244K  cn apm
 ap60n03d.pdf 

AP60N03D 30V N-Channel Enhancement Mode MOSFET Description The AP60N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60A DS D R

 8.7. Size:1158K  cn apm
 ap60n02d.pdf 

AP60N02D 20V N-Channel Enhancement Mode MOSFET Description The AP60N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 8.8. Size:1354K  cn apm
 ap60n02nf.pdf 

AP60N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 8.9. Size:1673K  cn apm
 ap60n03df.pdf 

AP60N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP60N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60A DS D R

 8.10. Size:1593K  cn apm
 ap60n04df.pdf 

AP60N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP60N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R

 8.11. Size:1843K  cn apm
 ap60n03nf.pdf 

AP60N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP60N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60A DS D R

 8.12. Size:1560K  cn apm
 ap60n03p.pdf 

AP60N03P 30V N-Channel Enhancement Mode MOSFET Description The AP60N03P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60 A DS D R

 8.13. Size:1346K  cn apm
 ap60n03f ap60n03t ap60n03p.pdf 

 8.14. Size:897K  cn apm
 ap60n04d.pdf 

AP60N04D 40V N-Channel Enhancement Mode MOSFET Description The AP60N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R

 8.15. Size:1402K  cn apm
 ap60n02bd.pdf 

AP60N02BD 20V N-Channel Enhancement Mode MOSFET Description The AP60N02BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R

 8.16. Size:1598K  cn apm
 ap60n03y.pdf 

AP60N03Y 30V N-Channel Enhancement Mode MOSFET Description The AP60N03Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =60A DS D R

 8.17. Size:1454K  cn apm
 ap60n04nf.pdf 

AP60N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP60N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R