AGMH10P15C - Даташиты. Аналоги. Основные параметры

AGMH10P15C General Description Product Summary The AGMH10P15C combines advanced trench to MOSFET technology with a low resistance package provide extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -150V 310m -10A Features TO-220 Pin Configuration Advance high cell density Trench technology Low R to minimi

AGMH10P15D General Description Product Summary The AGMH10P15D combines advanced trench to MOSFET technology with a low resistance package provide extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -150V 320m -10A Features TO-252 Pin Configuration Advance high cell density Trench technology Low R to minimi

AGMH12N10C General Description Product Summary The AGMH12N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 9.6m 55A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to m

AGMH1405C General Description The AGMH1405C combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 45V 2.8m 100A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mi

AGMH12N10I Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.71 AGMH12N10I Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH

AGMH12N10D Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.71 AGMH12N10D AGMH12N10D Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I

AGMH12H05H General Description Product Summary The AGMH12H05H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 120V 4.5m 125A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to

AGMH18N20C Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A -- V GS D DSS 200 -- Zero Gate Voltage Drain Current V =200V,V =0V -- 1 A DS GS I -- DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage V =