AGM628DM1 - Даташиты. Аналоги. Основные параметры

AGM628DM1 General DescriptionProduct SummaryThe AGM628DM1 combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and battery BVDSS RDSON IDprotection applications.60V 31m20A FeaturesAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to minimi

AGM628D General DescriptionThe AGM628D combines advanced trenchMOSFETProduct Summaryto providetechnology with a low resistance packageextremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features60V 26m30AAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to minimize

AGM628STypical Characteristics (cont.)Output Characteristics On Resistance 5040VGS= 4,5,6,7,8,9,10V45354030VGS= 4.5V3525VGS=10V3020251520103V1552V1000.00 0.25 0.50 0.75 1.00 1.25 1.50 0 5 10 15 20VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage 200 1.6IDS= 250AIDS=10A

AGM628MAPTable 3. P-Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250A -60 --V--Zero Gate Voltage Drain Current V =-60V,V =0V -1DS GSI -- --DSS AGate-Body Leakage Current V =20V,V =0V 100GS DSI -- --GSS nAV Gate Threshold Voltage V

AGM628AP General DescriptionThe AGM628AP combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and batteryprotection applications.60V 26m23A FeaturesAdvance high cell density Trench technologyPDFN3.3*3.3 Pin Configuration Low R to m

AGM628MN General DescriptionProduct SummaryThe AGM628MN combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features 60V 26m 8AAdvance high cell density Trench technologySOP8 Pin Configuration Low R to minimize con

AGM628M General DescriptionProduct SummaryThe AGM628M combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)device isThis ideal for load switch and battery 60V 30m 6.8Aprotection applications.-60V 53m -5.7A FeaturesSOP8 Pin Configuration Advance high cell density Trench technologyR to mini

AGM628MDTable 3. N- Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold Vo