AGM30P25MBQ datasheet, подбор замены

 ..1. Size:1755K  cn agmsemi
 agm30p25mbq.pdf 

AGM30P25MBQ Table 2. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -30 -- -- V Zero Gate Voltage Drain Current V =-30V,V =0V -1 DS GS I -- -- A DSS Gate-Body Leakage Current V = 20V,V =0V 100 GS DS I -- -- nA GSS V Gate Threshold Voltage V

 4.1. Size:1806K  cn agmsemi
 agm30p25mbp.pdf 

AGM30P25MBP General Description The AGM30P25MBP combines advanced trench Product Summary MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery -30V 20m -8A protection applications. Features PDFN3*3 Pin Configuration Advance high cell density Trench technology R to minimize c

 5.1. Size:1758K  cn agmsemi
 agm30p25m.pdf 

AGM30P25M General Description Product Summary The AGM30P25M combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 22m -8A protection applications. SOP8 Pin Configuration Features Advance high cell density Trench technology R to minimize conductiv

 6.1. Size:1501K  cn agmsemi
 agm30p25s.pdf 

AGM30P25S Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =-5A; V =-10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.5 AGM30P25S Gate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA V =f(T ); I =-250uA TH

 6.2. Size:1692K  cn agmsemi
 agm30p25ap.pdf 

AGM30P25AP Table 2. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -30 -- -- V Zero Gate Voltage Drain Current V =-30V,V =0V -1 DS GS I -- -- A DSS Gate-Body Leakage Current V = 20V,V =0V 100 GS DS I -- -- nA GSS V Gate Threshold Voltage V

 6.3. Size:1712K  cn agmsemi
 agm30p25d.pdf 

AGM30P25D General Description Product Summary The AGM30P25D combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 21m -12A protection applications. TO-252 Pin Configuration Features Advance high cell density Trench technology R to minimize conduc