AGM30P55A - описание и поиск аналогов

AGM30P55A Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics V =-10V GS V =-4.5V GS Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Fig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperature www.agm-mos.com 3 VER2.68 AGM30P55A Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform

AGM30P55D1 General Description Product Summary The AGM30P55D1 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. -30V 6.5m -65A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to mi

AGM30P55D General Description The AGM30P55D combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery protection applications. BVDSS RDSON ID Features -30V 5m -65A Advance high cell density Trench technology Low R to minimize conductive loss DS(ON)

AGM30P25MBP General Description The AGM30P25MBP combines advanced trench Product Summary MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery -30V 20m -8A protection applications. Features PDFN3*3 Pin Configuration Advance high cell density Trench technology R to minimize c

AGM30P25S Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =-5A; V =-10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.5 AGM30P25S Gate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA V =f(T ); I =-250uA TH

AGM30P10A Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 VGS=-10V 1 40 0.8 30 VGS=-4.5V 0.6 20 0.4 10 0.2 0 0 0.5 1 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature ( C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Junction Temperature 30 -50 50 150 0 20 -0.

AGM30P12D General Description Product Summary The AGM30P12D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. -30V 11m -35A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minim

AGM30P25MBQ Table 2. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -30 -- -- V Zero Gate Voltage Drain Current V =-30V,V =0V -1 DS GS I -- -- A DSS Gate-Body Leakage Current V = 20V,V =0V 100 GS DS I -- -- nA GSS V Gate Threshold Voltage V

AGM30P05AP General Description The AGM30P05AP combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery protection applications. BVDSS RDSON ID Features -30V 5.5m -60A Advance high cell density Trench technology Low R to minimize conductive loss D

AGM30P20M Characteristics Curve Typ. output characteristics Typ. drain-source on resistance -I =f(-V ) R =f(-I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance -I =f(-V ) R = f(T ); I =-8A; V =-10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.7 AGM30P20M Gate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA -V =f(T ); I =-2

AGM30P110D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -30 -- -- V GS D Zero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage

AGM30P35S General Description Product Summary The AGM30P35S combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 34.5m -6A protection applications. SOP8 Pin Configuration Features Advance high cell density Trench technology R to minimize conduct

AGM30P35M General Description Product Summary The AGM30P35M combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 33m -5.4A protection applications. Features SOP8 Pin Configuration Advance high cell density Trench technology R to minimize conduct

AGM30P100D Typical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. -V Gate -Source Voltage Vs.Tj GS(TH) -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature ( C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source Vo

AGM30P25AP Table 2. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -30 -- -- V Zero Gate Voltage Drain Current V =-30V,V =0V -1 DS GS I -- -- A DSS Gate-Body Leakage Current V = 20V,V =0V 100 GS DS I -- -- nA GSS V Gate Threshold Voltage V

AGM30P100A Typical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. -V Gate -Source Voltage Vs.Tj GS(TH) -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature ( C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source Vo

AGM30P85D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A -30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =-30V,V =0V -- -- -1.0 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage V

AGM30P18S General Description Product Summary The AGM30P18S combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. -30V 7.0m -17A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimi

AGM30P35AP General Description Product Summary The AGM30P35AP combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 34.5m -16A protection applications. PDFN3.3*3.3 Pin Configuration Features Advance high cell density Trench technology R to minimi

AGM30P08AP P- Channel Typical Characteristics TC=25 impulse=250uS -4.5V -6V -10V -3.5V 25 -3V -2.5 V -Vds Drain-Source Voltage (V) -Vgs Gate-Source Voltage (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Note TJ=25 VGS= 0V 25 VGS= -4.5V VGS= -10V -ID - Drain Current (A) -VF ,Forward Voltage (V) Figure 3. On-Resistance Variation vs F

AGM30P20D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -30 -- -- V GS D Zero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage

AGM30P08D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A -30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =-30V,V =0V -- -- -1.0 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage V

AGM30P25M General Description Product Summary The AGM30P25M combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 22m -8A protection applications. SOP8 Pin Configuration Features Advance high cell density Trench technology R to minimize conductiv

AGM30P10SR General Description Product Summary The AGM30P10SR combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. -30V 9.3m -15A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to mini

AGM30P25D General Description Product Summary The AGM30P25D combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 21m -12A protection applications. TO-252 Pin Configuration Features Advance high cell density Trench technology R to minimize conduc

AGM30P110A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -30 -- -- V GS D Zero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage

AGM30P16S Ciss Vgs Coss Crss Qg Vds Fig.3 Power Dissipation Derating Curve Fig.4 Typical output Characteristics V =-10V GS V =-4.5V GS Fig.5 Threshold Voltage V.S Junction Temperature Fig.6 Resistance V.S Drain Current www.agm-mos.com 3 VER2.68 AGM30P16S Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Switching Time Measurement Circuit Fig.12 Gate

AGM30P12M Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 VGS=-10V 1 40 0.8 30 VGS=-4.5V 0.6 20 0.4 10 0.2 0 0 0.5 1 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature ( C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Junction Temperature 30 -50 50 150 0 20 -0.

AGM30P14MBP -Vds Drain-Source Voltage (V) TJ-Junction Temperature( ) Figure 7 Capacitance vs Vds Figure 9 Power De-rating -Vds Drain-Source Voltage (V) TJ-Junction Temperature( ) Figure 8 Safe Operation Area Figure 10 ID Current Derating Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.agm-mos.com 4 VER2.68 C Capacitance (pF) Po

AGM30P10K Typical Characteristics Power Capability Current Capability 60 55 50 50 45 40 40 35 30 30 25 20 20 15 10 10 5 TC=25oC,VG= -10V TC=25oC 0 0 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 Tmp Mounting Point Temp. ( Tmp Mounting Point Temp. ( C) C) Safe Operating Area Transient Thermal Impedance 100 2 1 Duty = 0.5 1ms 0.2

AGM30P20AP Characteristics Curve www.agm-mos.com 3 VER2.68 AGM30P20AP Figure7 Safe Operation Area Figure8 Normalized Maximum Transient Thermal Impedance www.agm-mos.com 4 VER2.68 AGM30P20AP Dimensions PDFN3.3*3.3 MILLIMETER D SYMBOL MIN Typ. MAX A 0.700 0.800 0.900 b A1 0.152REF. A2 0 0.05 D 3.000 3.100 3.200 D1 2.300 2.450 2.600 D1 E 2.900 3.000 3.100 E1 3.1

AGM30P10AP P- Channel Typical Characteristics -3V TC=25 impulse=250uS -3.5V -4.5V 25 -6V -10V -2.5V Vds Drain-Source Voltage (V) -Vgs Gate-Source Voltage (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS= 0V Note TJ=25 VGS=-4.5V 25 VGS=-10V -V F ,Forward Voltage [V] -I D - Drain Current (A) Figure 4. Body Diode Forward Voltage F

AGM30P18E Table 3. Electrical Characteristics (TA=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A -30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltag

AGM30P16D Typical Electrical and Thermal Characteristics (Curves) -Vds Drain-Source Voltage (V) TJ-Junction Temperature( ) Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge -ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figu

AGM30P05D General Description The AGM30P05D combines advanced trench MOSFET technology with a low resistance package Product Summary to provide extremely low R . DS(ON) This device is ideal for load switch and battery protection applications. BVDSS RDSON ID Features Advance high cell density Trench technology -30V 5.5m -75A Low R to minimize conductive loss DS(

AGM30P05A General Description The AGM30P05A combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features -30V 5.5m -75A Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to mi

AGM30P08A General Description The AGM30P08A combines advanced trench Product Summary MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -30V 7.0m -60A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration R to minimize con

AGM30P10S General Description Product Summary The AGM30P10S combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. -30V 12m -14A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimiz

AGM30P16AP General Description The AGM30P16AP combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features -30V 11m -21A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R

AGM30P35D General Description Product Summary The AGM30P35D combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -30V 36.5m -20A protection applications. TO-252 Pin Configuration Features Advance high cell density Trench technology R to minimize cond

AGM30P20S General Description Product Summary The AGM30P20S combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -30V 15.5m -11A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimize co