AGM038N10A - Даташиты. Аналоги. Основные параметры

AGM038N10ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 100 -- -- VGS DDSSZero Gate Voltage Drain Current V =100V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltag

AGM03N85H General DescriptionProduct SummaryThe AGM03N85H combines advanced trenchtoMOSFET technology with a low resistance packageprovide extremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and battery85V 2.8m 140Aprotection applications. Features TO-263 Pin ConfigurationAdvance high cell density Trench technology Low R to minim

AGM035N10H General DescriptionProduct SummaryThe AGM035N10H combines advanced trenchMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is ideal switch and batteryfor loadBVDSS RDSON IDprotection applications.100V 3.5m 150A FeaturesAdvance high cell density Trench technologyTO-263 Pin ConfigurationLow R to

AGM035N10ACharacteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) DTyp. transfer characteristics Typ. forward transconductance I =f(V ) g =f(I ) D GS fs Dwww.agm-mos.com 3 VER2.71AGM035N10ADrain-source on-state resistance Typ. capacitances R =f(T ); I =56A; V =10V C =f(V ); V =0V; f =1MHz DS(on) j D GS DS GS

AGM035N10C General DescriptionProduct SummaryThe AGM035N10C combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.100V 3.5m 160A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to