AGM1095MAP datasheet, подбор замены

 ..1. Size:1521K  cn agmsemi
 agm1095map.pdf 

AGM1095MAP General Description The AGM1095MAP combines advanced trench Product Summary MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID device is This ideal for load switch and battery 100V 96m 7A protection applications. Features -100V 220m -6A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configurat

 6.1. Size:2622K  cn agmsemi
 agm1095mn.pdf 

AGM1095MN General Description Product Summary The AGM1095MN combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 100V 95m 6.8A Features SOP8 Pin Configuration Advance high cell density Trench technology Low R to minimize cond

 6.2. Size:1770K  cn agmsemi
 agm1095m.pdf 

AGM1095M General Description Product Summary The AGM1095M combines advanced trench MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID device is This ideal for load switch and battery 100V 100m 7A protection applications. -100V 240m -6A Features SOP8 Pin Configuration Advance high cell density Trench technology R to

 8.1. Size:1646K  cn agmsemi
 agm1099e.pdf 

AGM1099E Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage

 8.2. Size:1291K  cn agmsemi
 agm1099ey.pdf 

AGM1099EY General Description Product Summary The AGM1099EY combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 92m 5.0A Features Advance high cell density Trench technology SOT89-3 Pin Configuration Low R to mi

 8.3. Size:1137K  cn agmsemi
 agm1099el.pdf 

AGM1099EL General Description Product Summary The AGM1099EL combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 100m 5.0A Features Advance high cell density Trench technology SOT-23 Pin Configuration Low R to mi

 8.4. Size:1510K  cn agmsemi
 agm1099s.pdf 

AGM1099S General Description Product Summary The AGM1099S combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 100m 7.0A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimi

 8.5. Size:1466K  cn agmsemi
 agm1099d.pdf 

AGM1099D Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =6A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.73 AGM1099D Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH j D BR