AGM085N10C - аналоги, параметры транзистора - Справочник транзисторов

AGM085N10C даташит

..1. Size:786K cn agmsemi
agm085n10c.pdf pdf_icon

AGM085N10C General Description Product Summary The AGM085N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 100V 8.0m 80A Features Advance high cell density Trench technology TO-220C Pin Configuration Low R to m

0.1. Size:1484K cn agmsemi
agm085n10c1.pdf pdf_icon

AGM085N10C1 Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.82 AGM085N10C1 Figure 7. Normalize

5.1. Size:1268K cn agmsemi
agm085n10f.pdf pdf_icon

AGM085N10F Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V

9.1. Size:1082K cn agmsemi
agm08t15c.pdf pdf_icon

AGM08T15C General Description Product Summary The AGM08T15C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 150V 5.5m 150A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mi

Другие MOSFET... AGM10N15D , AGM042N10D , AGM056N08C , AGM056N10A , AGM056N10C , AGM056N10H , AGM065N10C , AGM065N10D , AO3401 , AGM085N10C1 , AGM085N10F , AGM08T15C , AGM1010A2 , AGM1010A-E , AGM1010A-F , AGM1030MA , AGM10N15R .