AGM12T05C - описание и поиск аналогов

 

Аналоги AGM12T05C. Основные параметры


   Наименование производителя: AGM12T05C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 840 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для AGM12T05C

   - подбор ⓘ MOSFET транзистора по параметрам

 

AGM12T05C даташит

 ..1. Size:1594K  cn agmsemi
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AGM12T05C

AGM12T05C General Description Product Summary The AGM12T05C combines advanced trench MOSFET technology with a low resistance package toprovide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 120V 5.5m 100A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mini

 6.1. Size:1313K  cn agmsemi
agm12t05f.pdfpdf_icon

AGM12T05C

AGM12T05F General Description The AGM12T05F combines advanced trench Product Summary MOSFET technology with a low resistance package toprovide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 120V 5.5m 100A Advance high cell density Trench technology Low R to minimize conductive loss TO-22

 6.2. Size:1305K  cn agmsemi
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AGM12T05C

AGM12T05A Dimensions PDFN5*6 D2 D MILLIMETER SYMBOL MIN Typ. MAX A 0.900 1.000 1.100 D1 A1 0.254 REF. A2 0 0.05 D 4.824 4.900 4.976 D1 3.910 4.010 4.110 D2 4.924 5.000 5.076 E 5.924 6.000 6.076 E1 3.375 3.475 3.575 E2 5.674 5.750 5.826 b 0.350 0.400 0.450 e 1.270 TYP. b e L 0.534 0.610 0.686 L1 0.424 0.500 0.576 L2 1.800 REF. k 1.190 1.290 1.390 H 0.549 0.625

 7.1. Size:1921K  cn agmsemi
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AGM12T05C

AGM12T08A Fig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage 20 80 10V 6V ID=20A 4.5V 4V 15 60 125 C 10 40 3.5V 25 C 5 20 Vgs=3V 0 0 2 4 6 8 10 0 0.5 1 1.5 2 VGS (V) VDS (V) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature 15 2.2 ID=20A 2 12 1.8 VGS=10V VGS

Другие MOSFET... AGM10N15R , AGM10N65F , AGM12N10A , AGM12N10AP , AGM12N10D , AGM12N10MNA , AGM12T02LL , AGM12T05A , NCEP15T14 , AGM12T05F , AGM12T08A , AGM12T12A , AGM12T12C , AGM12T12D , AGM13T05A , AGM15T05LL , AGM15T06C .

History: BF960S | AGM065N10C

 

 
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