AGM12T12A - Даташиты. Аналоги. Основные параметры

AGM12T12ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 120 -- -- VGS DDSSZero Gate Voltage Drain Current V =120V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage

AGM12T12D General DescriptionProduct SummaryThe AGM12T12D combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.120V 10m 60A FeaturesAdvance high cell density Trench technologyTO-252 Pin ConfigurationLow R to mini

AGM12T12C General DescriptionProduct SummaryThe AGM12T12C combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.120V 10m 60A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to mini

AGM12T08AFig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage208010V 6VID=20A4.5V4V1560125C10403.5V25C520Vgs=3V002 4 6 8 100 0.5 1 1.5 2VGS (V)VDS (V)Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature152.2ID=20A2121.8 VGS=10VVGS

AGM12T05F General DescriptionThe AGM12T05F combines advanced trenchProduct SummaryMOSFET technology with a low resistance packagetoprovide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features120V 5.5m 100AAdvance high cell density Trench technology Low R to minimize conductive loss TO-22

AGM12T05C General DescriptionProduct SummaryThe AGM12T05C combines advanced trenchMOSFET technology with a low resistance packagetoprovide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.120V 5.5m 100A FeaturesAdvance high cell density Trench technologyTO-220 Pin Configuration Low R to mini

AGM12T02LLTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 120 -- -- VGS DDSSZero Gate Voltage Drain Current V =120V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V

AGM12T05ADimensionsPDFN5*6D2DMILLIMETERSYMBOLMIN Typ. MAXA 0.900 1.000 1.100D1A1 0.254 REF.A2 0~0.05D 4.824 4.900 4.976D1 3.910 4.010 4.110D2 4.924 5.000 5.076E 5.924 6.000 6.076E1 3.375 3.475 3.575E2 5.674 5.750 5.826b 0.350 0.400 0.450e 1.270 TYP.b eL 0.534 0.610 0.686L1 0.424 0.500 0.576L2 1.800 REF.k 1.190 1.290 1.390H 0.549 0.625

AGM12T08C General DescriptionProduct SummaryThe AGM12T08C combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.120V 6.7m 78A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to min