AGM20N65F - Даташиты. Аналоги. Основные параметры

AGM20N65F General DescriptionProduct SummaryThe AGM20N65F combines advanced trenchMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is ideal switch and battery BVDSS RDSON IDfor loadprotection applications.650V 0.3620A FeaturesAdvance high cell density Trench technologyTO-220F Pin ConfigurationLow R to m

AGM20P22ASCharacteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =-5A; V =-4.5V D GS DS(on) j D GSwww.agm-mos.com 3 VER2.5AGM20P22ASGate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA V =f(T ); I =-250uA

AGM20T09CAGM20T09CTypical Characteristics www.agm-mos.com 3 VER2.7AGM20T09Cwww.agm-mos.com 4 VER2.7AGM20T09CTest Circuits and WaveformsFig. 1.1 Peak Diode Recovery dv/dt Test Circuit Fig. 1.2 Peak Diode Recovery dv/dt Waveforms www.agm-mos.com 5 VER2.7AGM20T09CTest Circuits and Waveforms (Cont.)www.agm-mos.com 6 VER2.7AGM20T09CTO-220 PACKAGE INFORMATIONAE

AGM20P16ASTypical Electrical and Thermal Characteristicstontofftrtftd(on) td(off)90%90%VOUT INVERTED10%10%90%VIN50% 50%10%PULSE WIDTHFigure 1:Switching Test Circuit Figure 2:Switching WaveformsT TJ-Junction Temperature()J-Junction Temperature()Figure 3 Power Dissipation Figure 4 Drain CurrentVds Drain-Source Voltage (V) I Drain Current (A)D-

AGM206MAP General DescriptionThe AGM206MAP combines advanced trenchMOSFET technology with a low resistance packageProduct Summaryto provide extremely low R .DS(ON)This device is idealfor load switch and batteryprotection applications.BVDSS RDSON ID Features25A20V 6mAdvance high cell density Trench technology Low R to minimize conductive lossDS(ON)

AGM20T09LLTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 200 -- -- VGS DDSSZero Gate Voltage Drain Current V =200V,V =0V -- -- 1.0 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Volt

AGM208D General DescriptionProduct SummaryThe AGM208D combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)This device is ideal BVDSS RDSON IDfor load switch and batteryprotection applications.20V 6.2m 50A FeaturesAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to minimize c

AGM206AFigure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area www.agm-mos.com 4 VER2.65AGM206ATest Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.agm-mos.com 5 VER2.65AGM206APDFN5*6 Marking Instructions:Model1:Model2:www.agm-mos.com 7 VER2.65

AGM205DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 20 -- -- VGS DDSSZero Gate Voltage Drain Current V =20V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =12V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

AGM20P07ELTypical Performance CharacteristicsFigure 2: Typical Transfer CharacteristicsFigure1: Output Characteristics-I (A) -ID (A)D25 254.5V T =-553V A20 202515 151252V2.5V1010551.5V-V (V)( )GS-V (V)DS00 00 1 2 3 4 50 1 2 3 4 50 0.5 1.0 1.5 2.0Figure 3:On-resistance vs. Drain Current Figure 4: Body Diode CharacteristicsRDS(

AGM206MDP General DescriptionProduct SummaryThe AGM206MDP combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is ideal BVDSS RDSON IDfor load switch and batteryprotection applications.20V4.5m 60A FeaturesAdvance high cell density Trench technologyDFN3*3 Pin Configuration Low R to minim

AGM204APwww.agm-mos.com 3 VER2.55AGM204APwww.agm-mos.com 4 VER2.55AGM204APFigure.9:Maximum Drain Current vs.Case Temperaturewww.agm-mos.com 5 VER2.55AGM204APFig.10 Safe Operating Area Fig. 11 Transient Thermal Response Curvewww.agm-mos.com 6 VER2.55AGM204APPDFN3.3*3.3Marking Instructions:www.agm-mos.com 8 VER2.55AGM204APDisclaimer:The information prov

AGM206D General DescriptionProduct SummaryThe AGM206D combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)This device is ideal BVDSS RDSON IDfor load switch and batteryprotection applications.20V 4.5m 85A FeaturesAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to minimize c

AGM204A General DescriptionProduct SummaryThe AGM204A combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)This device is ideal BVDSS RDSON IDfor load switch and batteryprotection applications.20V 3.1m 100A FeaturesAdvance high cell density Trench technologyPDFN5*6 Pin Configuration Low R to minimize

AGM206APTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics VDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V) Figure 3. Max BVDSS vs Junction Temperature Figure 4. Drain Current TJ-Junction Temperature() TJ-Junction Temperature() Figure 5. VGS(th) vs Junction Temperature Figure 6. RDS(ON) vs

AGM20P30AP1Table 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A -20 -- -- VGS DDSSZero Gate Voltage Drain Current V =-20V,V =0V -- -- -1.0 ADS GSIDSSV =10V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100V Gate Threshold Voltage

AGM20P30APTypical Characteristics P-Ch 20V Fast Switching MOSFETs20ID=-14A1612840 1 3 4 5-VGS (V)Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 129TJ=150 TJ=256300 0.3 0.6 0.9 1.2-VSD , Source-to-Drain Voltage (V)Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics 1.8 1 . 81.4 1 . 41 1 . 0