AGM20P22AS - Даташиты. Аналоги. Основные параметры

AGM20P22ASCharacteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =-5A; V =-4.5V D GS DS(on) j D GSwww.agm-mos.com 3 VER2.5AGM20P22ASGate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA V =f(T ); I =-250uA

AGM20P16ASTypical Electrical and Thermal Characteristicstontofftrtftd(on) td(off)90%90%VOUT INVERTED10%10%90%VIN50% 50%10%PULSE WIDTHFigure 1:Switching Test Circuit Figure 2:Switching WaveformsT TJ-Junction Temperature()J-Junction Temperature()Figure 3 Power Dissipation Figure 4 Drain CurrentVds Drain-Source Voltage (V) I Drain Current (A)D-

AGM20P07ELTypical Performance CharacteristicsFigure 2: Typical Transfer CharacteristicsFigure1: Output Characteristics-I (A) -ID (A)D25 254.5V T =-553V A20 202515 151252V2.5V1010551.5V-V (V)( )GS-V (V)DS00 00 1 2 3 4 50 1 2 3 4 50 0.5 1.0 1.5 2.0Figure 3:On-resistance vs. Drain Current Figure 4: Body Diode CharacteristicsRDS(

AGM20P30AP1Table 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A -20 -- -- VGS DDSSZero Gate Voltage Drain Current V =-20V,V =0V -- -- -1.0 ADS GSIDSSV =10V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100V Gate Threshold Voltage

AGM20P30APTypical Characteristics P-Ch 20V Fast Switching MOSFETs20ID=-14A1612840 1 3 4 5-VGS (V)Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 129TJ=150 TJ=256300 0.3 0.6 0.9 1.2-VSD , Source-to-Drain Voltage (V)Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics 1.8 1 . 81.4 1 . 41 1 . 0