AGM13T15A datasheet, аналоги, основные параметры

Наименование производителя: AGM13T15A  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 120 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 135 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 58 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6.5 ns

Cossⓘ - Выходная емкость: 515 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.021 Ohm

Тип корпуса: PDFN5X6

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Аналог (замена) для AGM13T15A

- подборⓘ MOSFET транзистора по параметрам

 

AGM13T15A даташит

 ..1. Size:1046K  cn agmsemi
 agm13t15a.pdf pdf_icon

AGM13T15A

AGM13T15A General Description Product Summary The AGM13T15A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 135V 16m 58A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to mi

 6.1. Size:1230K  cn agmsemi
 agm13t15d.pdf pdf_icon

AGM13T15A

AGM13T15D General Description Product Summary The AGM13T15D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 135V 15.5m 58A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to m

 6.2. Size:1478K  cn agmsemi
 agm13t15c.pdf pdf_icon

AGM13T15A

AGM13T15C General Description Product Summary The AGM13T15C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 135V 15.5m 58A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mi

 8.1. Size:1406K  cn agmsemi
 agm13t30a.pdf pdf_icon

AGM13T15A

AGM13T30A Test Circuit 1) E test Circuit AS 2) Gate charge test Circuit 3) Switch Time Test Circuit www.agm-mos.com 3 VER2.55 AGM13T30A Typical Electrical and Thermal Characteristics Vds Drain-Source Voltage (V) T J-Junction Temperature( ) Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Chara

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