DMN4027SSS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMN4027SSS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.8 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 8 A
Общий заряд затвора (Qg): 6.3 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.047 Ohm
Тип корпуса: SO8
Аналог (замена) для DMN4027SSS
DMN4027SSS Datasheet (PDF)
dmn4027sss.pdf
A Product Line ofDiodes IncorporatedDMN4027SSS 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 27m @ VGS= 10V 8.0A Qualified to AEC-Q101 Standards for High Reliability40V 47m @ VGS= 4.5V 6.1A Mechanic
dmn4027ssd.pdf
A Product Line ofDiodes IncorporatedDMN4027SSD 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 27m @ VGS= 10V 7.1A Qualified to AEC-Q101 Standards for High Reliability40V 47m @ VGS= 4.5V 5.4A Mec
dmn4026sk3.pdf
DMN4026SK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) Low On-resistance TC = +25C Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 24m @VGS = 10V 28A 40V Halogen and Antimony Free. Green Device (Note 3) 32m @VGS = 4.5
dmn4020lfde.pdf
DMN4020LFDE40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm profile ideal for low profile applications PCB footprint of 4mm2 ID max V(BR)DSS RDS(ON) max Low Gate Threshold Voltage TA = +25C Low On-Resistance 20m@ VGS = 10V 8.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40V Halogen and Antim
dmn4026ssd.pdf
DMN4026SSD40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX TA = +25C Low Input Capacitance 24m @VGS = 10V 9.0A Fast Switching Speed 40V 32m @VGS = 4.5V 7.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description
dmn4026sk3.pdf
isc N-Channel MOSFET Transistor DMN4026SK3FEATURESDrain Current I = 28A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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History: SSG4930N
