AGM14N10AP - Даташиты. Аналоги. Основные параметры

AGM14N10APTypical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71AGM14N10APPDFN3.3*3.3Markin

AGM14N10ATypical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71AGM14N10ADimensionsPDFN5*

AGM14N10D General DescriptionThe AGM14N10D combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications. Features100V 12m 50AAdvance high cell density Trench technologyTO-252 Pin ConfigurationLow R to mini

AGM1405FTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 40 -- -- VGS DZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100VGS(th) Gate Threshold Voltage V =V

AGM1405C1 General DescriptionThe AGM1405C1 combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is ideal for load switch and batteryBVDSS RDSON IDprotection applications.40V 3.2m 130A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to min