AGM14N10D datasheet, аналоги, основные параметры
Наименование производителя: AGM14N10D 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 68 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 54.5 ns
Cossⓘ - Выходная емкость: 470 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
Тип корпуса: TO252
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Аналог (замена) для AGM14N10D
- подборⓘ MOSFET транзистора по параметрам
AGM14N10D даташит
agm14n10d.pdf
AGM14N10D General Description The AGM14N10D combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. Features 100V 12m 50A Advance high cell density Trench technology TO-252 Pin Configuration Low R to mini
agm14n10ap.pdf
AGM14N10AP Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM14N10AP PDFN3.3*3.3 Markin
agm14n10a.pdf
AGM14N10A Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM14N10A Dimensions PDFN5*
agm1405f.pdf
AGM1405F Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V =V
Другие IGBT... AGM13T15C, AGM13T15D, AGM13T30A, AGM13T30D, AGM1405C1, AGM1405F, AGM14N10A, AGM14N10AP, 2N7002, AGM150P10AP, AGM150P10D, AGM150P10S, AGM15N10AP, AGM15N10D, AGM305A, AGM305AP, AGM305D
Параметры MOSFET. Взаимосвязь и компромиссы
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