AGM15N10AP - описание и поиск аналогов

AGM15N10AP General Description Product Summary The AGM15N10AP combines advanced trench to MOSFET technology with a low resistance package provide extremely low R . DS(ON) This device is ideal load switch and battery protection for BVDSS RDSON ID applications. Features 100V 85m 12A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R

AGM15N10D-G General Description Product Summary The AGM15N10D-G combines advanced trench to MOSFET technology with a low resistance package provide extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 100V 68m 16A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimiz

AGM15N10D General Description Product Summary The AGM15N10D combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) This device is ideal and battery for load switch BVDSS RDSON ID protection applications. Features 100V 85m 15A Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize co

AGM15T16D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A GS D 150 -- -- V Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage

AGM150P10S Gate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA -V =f(T ); I =-250uA TH j D BR(DSS) j D Typ. gate charge Typ. capacitances -V =f(Q ) ; I =-5A C =f(-V ); V =0V; f =1MHz GS g D DS GS www.agm-mos.com 3 VER2.65 AGM150P10S Max. transient thermal impedance Z =f(t ) thJC p www.agm-mos.com 5 VER2.65 AGM150P10S Test Circuit and Waveform

AGM15P13E Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =-5A; D GS DS(on) j D V =10V GS www.agm-mos.com 3 VER2.6 AGM15P13E Gate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA V =f(T ); I =-250uA

AGM15T03LL Fig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage 6V 100 8 ID=20A 10V 5V 80 6 4.5V 125 60 4 40 25 2 20 Vgs=4V 0 0 0 0.5 1 1.5 2 2 4 6 8 10 VDS (V) VGS (V) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature 7 2.6 ID=20A 2.4 6 2.2 VGS=10V 5 2

AGM15T06C-B Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 140 147 -- V GS D DSS Zero Gate Voltage Drain Current V =140V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Volt

AGM15P22AS Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -16 -- -- V GS D Zero Gate Voltage Drain Current V =-16V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 10V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage

AGM15T16C Typical Electrical & Thermal Characteristics 100 30 VGS = 10V VDS = 5.0V VGS = 6.0V VGS = 8.0V 80 24 TJ = 125 C 60 18 VGS = 5.5V 40 12 TJ = 25 C VGS = 5.0V 20 6 VGS = 4.5V 0 0 0 1 2 3 4 5 2 3 4 5 6 7 VDS (V) VGS (V) Figure 1 Saturation Characteristics Figure 2 Transfer Characteristics 17 2.5 VGS = 10V ID = 20A 16 2 15 1.5 VGS = 10V 14 1 13 0.5 12 0 0

AGM150P10D Gate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA -V =f(T ); I =-250uA TH j D BR(DSS) j D Typ. gate charge Typ. capacitances -V =f(Q ) ; I =-5A C =f(-V ); V =0V; f =1MHz GS g D DS GS www.agm-mos.com 3 VER2.66 AGM150P10D Max. transient thermal impedance Z =f(t ) thJC p www.agm-mos.com 5 VER2.66 AGM150P10D Test Circuit and Waveform

AGM15P16AS General Description Product Summary The AGM15P16AS combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID protection This device is ideal for load switch and battery applications. -15V 13m -7.5A Features Advance high cell density Trench technology DFN2*2 Pin Configuration Low R to minimize

AGM15T13A Typical Electrical and Thermal Characteristics 150 150 VGS = 10V VDS = 5.0V 8.0V VGS = 6.0V 7.0V 120 120 VGS = 5.5V 90 90 TJ = 175 C VGS = 5.0V 60 60 VGS = 4.8V TJ = 25 C 30 30 VGS = 4.5V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Figure 2 Transfer Characteristics Figure 1 Output Characteristics 5

AGM15T13H Table3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 150 -- V GS D DSS -- Zero Gate Voltage Drain Current V =150V,V =0V -- 1 A DS GS I -- DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage V =V

AGM15T06H Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V

AGM15T06LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage

AGM15P30AS Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -15 -18 -- V GS D Zero Gate Voltage Drain Current V =-15V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 10V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltag

AGM15P30E General Description Product Summary The AGM15P30E combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID protection This device is ideal for load switch and battery applications. -15V 34m -4.1A Features Advance high cell density Trench technology SOT-23-3 Pin Configuration Low R to minimize

AGM15T06T Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V

AGM15T06C General Description Product Summary The AGM15T06C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 150V 6.5m 140A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mi

AGM15T13D Table3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 150 -- V GS D DSS -- Zero Gate Voltage Drain Current V =150V,V =0V -- 1 A DS GS I -- DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage V =V

AGM15T13F Table3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 150 -- V GS D DSS -- Zero Gate Voltage Drain Current V =150V,V =0V -- 1 A DS GS I -- DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage V =V

AGM150P10AP Gate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA -V =f(T ); I =-250uA TH j D BR(DSS) j D Typ. gate charge Typ. capacitances -V =f(Q ) ; I =-5A C =f(-V ); V =0V; f =1MHz GS g D DS GS www.agm-mos.com 3 VER2.65 AGM150P10AP Max. transient thermal impedance Z =f(t ) thJC p www.agm-mos.com 5 VER2.65 AGM150P10AP Test Circuit and Waveform

AGM15T05LL Diagram 6 Gate threshold voltage vs. Diagram 5 Typ. transfer characteristics Junction temperature 18 1.3 16 1.2 14 1.1 12 1.0 125oC 25oC 10 0.9 typ 8 0.8 6 0.7 4 0.6 2 0.5 0 0.4 1 2 3 4 5 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 O VGS [V] Tj [ C] V =f(T ); I =250 A th j D I =f(V ); V =5V; parameter T D GS DS j Diagram 7 On-state resistance

AGM15P13AS General Description Product Summary The AGM15P13AS combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID protection This device is ideal for load switch and battery applications. -15V 12m -10A Features Advance high cell density Trench technology DFN2*2 Pin Configuration Low R to minimize

AGM15T13C Table3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 150 -- V GS D DSS -- Zero Gate Voltage Drain Current V =150V,V =0V -- 1 A DS GS I -- DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage V =V