AGM305AP - описание и поиск аналогов

 

Аналоги AGM305AP. Основные параметры


   Наименование производителя: AGM305AP
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 68 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 1038 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: PDFN3.3X3.3
 

 Аналог (замена) для AGM305AP

   - подбор ⓘ MOSFET транзистора по параметрам

 

AGM305AP даташит

 ..1. Size:962K  cn agmsemi
agm305ap.pdfpdf_icon

AGM305AP

AGM305AP General Description The AGM305AP combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 30V 4.5m 68A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to

 7.1. Size:1371K  cn agmsemi
agm305a.pdfpdf_icon

AGM305AP

AGM305A Typical electrical and thermal characteristics Figure 2 Typical Transfer Characteristics Figure 1 Typical Output Characteristics Figure 4 On-Resistance vs. Junction Figure 3 Body-Diode Characteristics Temperature Figure 5 Capacitance Characteristics Figure 6 Gate-Charge Characteristics www.agm-mos.com 3 VER2.72 AGM305A Test circuits and Waveforms Gate charge cir

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agm305ma.pdfpdf_icon

AGM305AP

AGM305MA General Description Product Summary The AGM305MA combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) BVDSS RDSON ID switch and battery This device is ideal for load protection applications. 30V 4.6m 50A Features PDFN5*6 Pin Configuration Advance high cell density Trench technology Low R to minim

 8.2. Size:1027K  cn agmsemi
agm305d.pdfpdf_icon

AGM305AP

AGM305D www.agm-mos.com 3 VER2.71 AGM305D TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics VDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V) Figure 3. Max BVDSS vs Junction Temperature Figure 4. Drain Current TJ-Junction Temperature( ) TJ-Junction Temperature( ) Figure 5. VGS(th) vs Juncti

Другие MOSFET... AGM14N10AP , AGM14N10D , AGM150P10AP , AGM150P10D , AGM150P10S , AGM15N10AP , AGM15N10D , AGM305A , AON6414A , AGM305D , AGM305MA , AGM306A , AGM306AP , AGM306C , AGM306D , AGM306MA , AGM306MBP .

History: AGM1075MNA | JMSL1018PGQ | JMPC4N60BJ

 

 
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