AGM305D - описание и поиск аналогов

AGM305D www.agm-mos.com 3 VER2.71 AGM305D TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics VDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V) Figure 3. Max BVDSS vs Junction Temperature Figure 4. Drain Current TJ-Junction Temperature( ) TJ-Junction Temperature( ) Figure 5. VGS(th) vs Juncti

AGM305AP General Description The AGM305AP combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 30V 4.5m 68A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to

AGM305A Typical electrical and thermal characteristics Figure 2 Typical Transfer Characteristics Figure 1 Typical Output Characteristics Figure 4 On-Resistance vs. Junction Figure 3 Body-Diode Characteristics Temperature Figure 5 Capacitance Characteristics Figure 6 Gate-Charge Characteristics www.agm-mos.com 3 VER2.72 AGM305A Test circuits and Waveforms Gate charge cir

AGM305MA General Description Product Summary The AGM305MA combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) BVDSS RDSON ID switch and battery This device is ideal for load protection applications. 30V 4.6m 50A Features PDFN5*6 Pin Configuration Advance high cell density Trench technology Low R to minim