AGM306D datasheet, подбор замены

 ..1. Size:1163K  cn agmsemi
 agm306d.pdf 

AGM306D Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.agm-mos.com 3 VER2.71 AGM306D TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics VDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V) Figure 3. Max BV vs Junction Temperature Figure 4. Drain Curren

 8.1. Size:1093K  cn agmsemi
 agm306mnq.pdf 

AGM306MNQ Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A GS D 30 -- -- V Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V

 8.2. Size:1041K  cn agmsemi
 agm306ap.pdf 

AGM306AP Typical Characteristics 12 12 VGS=10V ID=12A VGS=7V 10 VGS=5V 11 8 VGS=4.5V VGS=3V 9 6 4 8 2 6 0 2 4 6 8 10 0 0.25 0.5 0.75 VGS (V) VDS Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source 10 12 VDS=20V ID=12A 10 8 8 6 TJ=150 TJ=25 6 4 4 2 2 0 0 0 0.3 0.6 0.9 0 6 12 18 24 30 QG , Total Gate

 8.3. Size:1072K  cn agmsemi
 agm306mbq.pdf 

AGM306MBQ Table 3. Electrical Characteristics (T =25 unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V

 8.4. Size:830K  cn agmsemi
 agm306c.pdf 

AGM306C General Description Product Summary The AGM306C combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) This device is ideal BVDSS RDSON ID for load switch and battery protection applications. 30V 5.7m 60A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimize c

 8.5. Size:495K  cn agmsemi
 agm306mna.pdf 

AGM306MNA General Description Product Summary The AGM306MNA combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . This device is ideal DS(ON) BVDSS RDSON ID switch and battery protection applications. for load Features 30V 6.8m 40A Advance high cell density Trench technology QFN5*6 Pin Configuration Low R to minim

 8.6. Size:834K  cn agmsemi
 agm306ma.pdf 

AGM306MA Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 1 V =10V GS 0.8 V =4.5V GS 25 0.6 0.4 0.2 0 0 0.5 1 1.5 2 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature ( C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current 2.5 20 2 1.5 10 1 0.5 0 0 -50 50 150 0 10 20 30 Junction Tempe

 8.7. Size:1326K  cn agmsemi
 agm306a.pdf 

AGM306A Table 3. Electrical Characteristics (T =25 unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V

 8.8. Size:1082K  cn agmsemi
 agm306mbp.pdf 

AGM306MBP Table 3. Electrical Characteristics (T =25 unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V