AGM312ME - аналоги, параметры транзистора - Справочник транзисторов

AGM312ME технические параметры

..1. Size:2273K cn agmsemi
agm312me.pdf pdf_icon

AGM312ME Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current -- -- nA I V = 12V,V =0V GSS GS DS 100 V Gate Threshold Voltage

7.1. Size:1449K cn agmsemi
agm312map.pdf pdf_icon

AGM312MAP Table 3. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -30 -- -- V Zero Gate Voltage Drain Current V =-24V,V =0V -1 DS GS I -- -- A DSS Gate-Body Leakage Current V = 20V,V =0V 100 GS DS I -- -- nA GSS V Gate Threshold Voltage V =

7.2. Size:1126K cn agmsemi
agm312m2.pdf pdf_icon

AGM312M2 General Description Product Summary The AGM312M2 combines advanced trench MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 30V 18m 9A protection applications. -30V 37m -6.8A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R t

7.3. Size:1006K cn agmsemi
agm312m1.pdf pdf_icon

AGM312M1 General Description Product Summary The AGM312M1 combines advanced trench MOSFET technology with a low resistance BVDSS RDSON ID to provide extremely low R . package DS(ON) 30V 12m 9.0A This device is ideal for load switch and battery -30V 30m -7.2A protection applications. Features SOP-8 Pin Configuration Advance high cell density Trench technology Low

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF630 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .