Справочник MOSFET. DMN4034SSD

 

DMN4034SSD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMN4034SSD
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 2.1 W
   Предельно допустимое напряжение сток-исток |Uds|: 40 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3 V
   Максимально допустимый постоянный ток стока |Id|: 6.3 A
   Общий заряд затвора (Qg): 4.9 nC
   Сопротивление сток-исток открытого транзистора (Rds): 0.059 Ohm
   Тип корпуса: SO8

 Аналог (замена) для DMN4034SSD

 

 

DMN4034SSD Datasheet (PDF)

 ..1. Size:694K  diodes
dmn4034ssd.pdf

DMN4034SSD
DMN4034SSD

A Product Line ofDiodes IncorporatedDMN4034SSD 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 34m @ VGS= 10V 6.3A Qualified to AEC-Q101 Standards for High Reliability 40V 59m @ VGS= 4.5V 4.8A Me

 5.1. Size:677K  diodes
dmn4034sss.pdf

DMN4034SSD
DMN4034SSD

A Product Line ofDiodes IncorporatedDMN4034SSS 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 34m @ VGS= 10V 7.2A Qualified to AEC-Q101 Standards for High Reliability 40V 59m @ VGS= 4.5V 5.5A Mechani

 8.1. Size:649K  diodes
dmn4030lk3.pdf

DMN4034SSD
DMN4034SSD

A Product Line ofDiodes IncorporatedDMN4030LK340V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 30m @ VGS = 10V 13.7A Qualified to AEC-Q101 Standards

 8.2. Size:404K  diodes
dmn4031ssdq.pdf

DMN4034SSD
DMN4034SSD

DMN4031SSDQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low On-Resistance BVDSS RDS(ON) Max TA = +25C (Note 7) Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 31m @ VGS = 10V 7.0A 40V Halogen and Antimony Free. Green Device (Note 3) 50m @ VGS = 4.5V 5.8A Qualifie

 8.3. Size:424K  diodes
dmn4031ssd.pdf

DMN4034SSD
DMN4034SSD

DMN4031SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low On-Resistance V(BR)DSS RDS(ON) Max TA = +25C (Note 5) Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 31m @ VGS = 10V 7.0A 40V Halogen and Antimony Free. Green Device (Note 3) 50m @ VGS = 4.5V 5.6A Qualifie

 8.4. Size:534K  diodes
dmn4035l.pdf

DMN4034SSD
DMN4034SSD

DMN4035L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BV R max I max Low Input Capacitance DSS DS(ON) D Fast Switching Speed Low Input/Output Leakage 42m @ V = 10V 4.6A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40V Halogen and Antimony Free. Green Device (Note 3) 52m @ V = 4

 8.5. Size:645K  diodes
dmn4036lk3.pdf

DMN4034SSD
DMN4034SSD

A Product Line ofDiodes IncorporatedDMN4036LK340V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 36m @ VGS= 10V 12.2A Qualified to AEC-Q101 Standards for High Reliability 40V 61m @ VGS= 4.5V 9.4A Mechani

 8.6. Size:266K  inchange semiconductor
dmn4030lk3.pdf

DMN4034SSD
DMN4034SSD

isc N-Channel MOSFET Transistor DMN4030LK3FEATURESDrain Current I = 9.6A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 8.7. Size:266K  inchange semiconductor
dmn4036lk3.pdf

DMN4034SSD
DMN4034SSD

isc N-Channel MOSFET Transistor DMN4036LK3FEATURESDrain Current I = 12.2A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 36m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

Другие MOSFET... DMB54D0UV , DMG1026UV , DMN4009LK3 , DMN4015LK3 , DMN4027SSD , DMN4027SSS , DMN4030LK3 , DMN4031SSD , AON6414A , DMN4034SSS , DMN4036LK3 , DMN4040SK3 , DMN5010VAK , DMN55D0UT , DMN5L06DMK , DMN5L06DWK , DMN5L06K .

 

 
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