AGM318MBP - Даташиты. Аналоги. Основные параметры

AGM318MBP General DescriptionThe AGM318MBP combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.30V 16m 8A FeaturesAdvance high cell density Trench technologyPDFN3.3*3.3 Pin Configuration Low R to mi

AGM318MAPTable 3. N- Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold V

AGM318MN General DescriptionProduct SummaryThe AGM318MN combines advancedtrenchMOSFET technology with a low resistanceto provide extremely low R .package DS(ON)BVDSS RDSON IDThis device isideal for load switch and battery30V 16m 8Aprotection applications. Features SOP8 Pin Configuration Advance high cell density Trench technologyR to minimize conductive lo

AGM318D25 20 VGS= 5 ~10V 20 16 VGS 4V 15 12 10 8 5 4VGS 3V 0 00 1 2 3 4 5 6 0 1 2 3 4 5 6VDS , Drain-to-Source Voltage (V) VGS , Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 1.1 2 VG = 10V ID= 250uA 1.075 1.75 ID= 6.9A 1.05 1.5 1.025 1.25 1 1 0.975 0.75 0.95 0.50.925 0.25-50 -25 0 25 50 75 100 12