AGM18N10MNA - Даташиты. Аналоги. Основные параметры

AGM18N10MNATypical Performance CharacteristicsVds Drain-Source Voltage (V) TJ-Junction Temperature() Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figure 6 Source- Drain D

AGM18N10APTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 100 -- -- VGS DDSSZero Gate Voltage Drain Current V =100V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V

AGM18N10ITypical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71AGM18N10IFigure 13. Maximum Eff

AGM18N10ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 100 -- -- VGS DDSSZero Gate Voltage Drain Current V =100V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V

AGM18N10S General DescriptionProduct SummaryThe AGM18N10S combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features 100V 17m 12AAdvance high cell density Trench technologySOP8 Pin Configuration Low R to minimize