AGM30P20D - описание и поиск аналогов

AGM30P20D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -30 -- -- V GS D Zero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage

AGM30P20M Characteristics Curve Typ. output characteristics Typ. drain-source on resistance -I =f(-V ) R =f(-I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance -I =f(-V ) R = f(T ); I =-8A; V =-10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.7 AGM30P20M Gate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA -V =f(T ); I =-2

AGM30P20AP Characteristics Curve www.agm-mos.com 3 VER2.68 AGM30P20AP Figure7 Safe Operation Area Figure8 Normalized Maximum Transient Thermal Impedance www.agm-mos.com 4 VER2.68 AGM30P20AP Dimensions PDFN3.3*3.3 MILLIMETER D SYMBOL MIN Typ. MAX A 0.700 0.800 0.900 b A1 0.152REF. A2 0 0.05 D 3.000 3.100 3.200 D1 2.300 2.450 2.600 D1 E 2.900 3.000 3.100 E1 3.1

AGM30P20S General Description Product Summary The AGM30P20S combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -30V 15.5m -11A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimize co