AGM311MAP - Даташиты. Аналоги. Основные параметры

AGM311MAP General DescriptionThe AGM311MAP combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features30V 10.5m 25AAdvance high cell density Trench technology Low R to minimize conductive loss PDFN3

AGM311MN General DescriptionProduct SummaryThe AGM311MN combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery 30V 10.5m 11Aprotection applications.SOP8 Pin Configuration Features Advance high cell density Trench technologyR to minimize conductive

AGM310AS General DescriptionProduct SummaryThe AGM310AS combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and batteryprotection applications.30V 6.7m 22A FeaturesAdvance high cell density Trench technologyDFN2*2 Pin Configuration Low R to minimi

AGM314MATable 3. N- Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold Vo

AGM318MAPTable 3. N- Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold V

AGM312MAPTable 3. P-Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250A -30 ---- VZero Gate Voltage Drain Current V =-24V,V =0V -1DS GSI -- -- ADSSGate-Body Leakage Current V =20V,V =0V 100GS DSI -- -- nAGSSV Gate Threshold Voltage V =

AGM310MAPTable 3. N- Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold V

AGM310MAN Channel characteristics curveFig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics1.2501V =10V GS0.8V =4.5V GS250.60.40.200 0.5 1 1.5 20Drain-Source voltage (V)0 50 100 150 200Temperature (C)Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current 2.52021.51010.500-5

AGM310A General DescriptionProduct SummaryThe AGM310A combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)This device is ideal BVDSS RDSON IDfor load switch and batteryprotection applications.30V 9.7m 28A FeaturesAdvance high cell density Trench technologyPDFN5*6 Pin Configuration Low R to minimize

AGM310DTable 3. Electrical Characteristics (Tj=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

AGM315MBPTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current 100VGS(th) Gate Threshold Voltage V =V

AGM310M General DescriptionProduct SummaryThe AGM310M combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery 30V 12m 12Aprotection applications.-30V 16m -12A FeaturesSOP8 Pin Configuration Advance high cell density Trench technologyR to minimi

AGM310MARTable 3. N- Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold V

AGM314MDTable 3. P-Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250A -30 ---- VZero Gate Voltage Drain Current V =-30V,V =0V -1DS GSI -- -- ADSSGate-Body Leakage Current V =20V,V =0V 100GS DSI -- -- nAGSSV Gate Threshold Voltage V =V

AGM318D25 20 VGS= 5 ~10V 20 16 VGS 4V 15 12 10 8 5 4VGS 3V 0 00 1 2 3 4 5 6 0 1 2 3 4 5 6VDS , Drain-to-Source Voltage (V) VGS , Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 1.1 2 VG = 10V ID= 250uA 1.075 1.75 ID= 6.9A 1.05 1.5 1.025 1.25 1 1 0.975 0.75 0.95 0.50.925 0.25-50 -25 0 25 50 75 100 12

AGM310MDTable 3. N- Channel Electrical Characteristics (Tj=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold Vo

AGM318MN General DescriptionProduct SummaryThe AGM318MN combines advancedtrenchMOSFET technology with a low resistanceto provide extremely low R .package DS(ON)BVDSS RDSON IDThis device isideal for load switch and battery30V 16m 8Aprotection applications. Features SOP8 Pin Configuration Advance high cell density Trench technologyR to minimize conductive lo

AGM314MAPTable 3. P-Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250A -30 ---- VZero Gate Voltage Drain Current V =-30V,V =0V -1DS GSI -- -- ADSSGate-Body Leakage Current V =20V,V =0V 100GS DSI -- -- nAGSSV Gate Threshold Voltage V =

AGM312M2 General DescriptionProduct SummaryThe AGM312M2 combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R .package DS(ON)BVDSS RDSON IDThis device isideal for load switch and battery30V 18m 9Aprotection applications.-30V 37m -6.8A Features Advance high cell density Trench technologySOP8 Pin ConfigurationLow R t

AGM312D General DescriptionThe AGM312D combines advanced trench MOSFETProduct Summaryto providetechnology with a low resistance packageextremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features30V 14m 20AAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to minimize

AGM312M1 General DescriptionProduct SummaryThe AGM312M1 combines advanced trenchMOSFET technology with a low resistanceBVDSS RDSON IDto provide extremely low R .package DS(ON)30V 12m 9.0AThis device isideal for load switch and battery-30V 30m -7.2Aprotection applications. FeaturesSOP-8 Pin Configuration Advance high cell density Trench technologyLow

AGM310AP1Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics1.2501V =10V GS0.8V =4.5V GS250.60.40.200 0.5 1 1.5 20Drain-Source voltage (V)0 50 100 150 200Temperature (C)Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current 2.52021.51010.500-50 50 1500 10 20 30Junction Tempe

AGM312METable 3. N- Channel Electrical Characteristics (TJ=25unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current -- -- nAI V =12V,V =0VGSS GS DS100V Gate Threshold Voltage

AGM312APCHARACTERISTICS CURVES (TC = 25C unless otherwise noted) Continuous Drain Current vs. TC Normalized RDS(ON) vs. TJ TJ, Junction Temperature (C) TC, Case Temperature (C) Normalized Vth vs. TJ Gate Charge Qg, Gate Charge (nC) TJ, Junction Temperature (C) Normalized Transient Impedance Maximum Safe Operation Area VDS, Drain to Source Voltage (V) Square Wa

AGM315MN General DescriptionProduct SummaryThe AGM315MN combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features30V 12m 12AAdvance high cell density Trench technologySOP8 Pin Configuration Low R to minimize c

AGM318MBP General DescriptionThe AGM318MBP combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.30V 16m 8A FeaturesAdvance high cell density Trench technologyPDFN3.3*3.3 Pin Configuration Low R to mi