AGM302A1 - Даташиты. Аналоги. Основные параметры

AGM302A1 General DescriptionProduct SummaryThe AGM302A1 combines advanced trenchtoMOSFETtechnology with a low resistance packageprovideextremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and battery30V 1.8m 180Aprotection applications. FeaturesPDFN5*6 Pin ConfigurationAdvance high cell density Trench technologyLow R to min

AGM302C1 General DescriptionThe AGM302C1 combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features 30V 1.8m 138AAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to minimi

AGM302D1 General DescriptionProduct SummaryThe AGM302D1 combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .This device is idealDS(ON) for loadBVDSS RDSON IDprotection applications.switch and battery30V 2.1m 180A FeaturesAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to minimize

AGM308MATable 3. N- Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold Vo

AGM303D1 General DescriptionProduct SummaryThe AGM303D1 combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .This device is idealDS(ON) for loadBVDSS RDSON IDprotection applications.switch and battery30V 2.0m 100A FeaturesAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to minimize

AGM305AP General DescriptionThe AGM305AP combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.30V 4.5m 68A FeaturesAdvance high cell density Trench technologyPDFN3.3*3.3 Pin ConfigurationLow R to

AGM30P25MBP General DescriptionThe AGM30P25MBP combines advanced trenchProduct SummaryMOSFET technology with a low resistanceto provide extremely low R .package DS(ON)BVDSS RDSON IDThis device isideal for load switch and battery-30V 20m -8Aprotection applications. Features PDFN3*3 Pin Configuration Advance high cell density Trench technologyR to minimize c

AGM3015H General DescriptionThe AGM3015H combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.30V 1.5m 138A FeaturesAdvance high cell density Trench technologyTO-263 Pin ConfigurationLow R to mini

AGM30P25SCharacteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =-5A; V =-10V D GS DS(on) j D GSwww.agm-mos.com 3 VER2.5AGM30P25SGate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA V =f(T ); I =-250uA TH

AGM306MNQTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter ConditionsMin Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250AGS D30 -- -- VZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100VGS(th) Gate Threshold Voltage V

AGM30P10AFig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 VGS=-10V 1 40 0.8 30 VGS=-4.5V 0.6 20 0.4 10 0.2 0 0 0.5 1 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature (C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Junction Temperature 30 -50 50 150 0 20 -0.

AGM308MN General DescriptionThe AGM308MN combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryprotection applications.BVDSS RDSON ID Features30V 8.8m 15AAdvance high cell density Trench technology Low R to minimize conductive lossDS(ON)

AGM305ATypical electrical and thermal characteristicsFigure 2: Typical Transfer CharacteristicsFigure 1: Typical Output CharacteristicsFigure 4: On-Resistance vs. JunctionFigure 3: Body-Diode CharacteristicsTemperatureFigure 5: Capacitance Characteristics Figure 6: Gate-Charge Characteristicswww.agm-mos.com 3 VER2.72AGM305ATest circuits and Waveforms:Gate charge cir

AGM30P12D General DescriptionProduct SummaryThe AGM30P12D combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.-30V 11m -35A FeaturesAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to minim

AGM306APTypical Characteristics 1212VGS=10V ID=12AVGS=7V10VGS=5V 118VGS=4.5VVGS=3V96482602 4 6 8 100 0.25 0.5 0.75VGS (V)VDS Drain-to-Source Voltage (V)Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source 1012VDS=20VID=12A10886TJ=150 TJ=25644220 00 0.3 0.6 0.9 0 6 12 18 24 30QG , Total Gate

AGM304MNQ Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.81.81.41.41.010.60.60.2 0.2-50 0 50 100 150 -50 0 50 100 150TJ ,Junction Temperature ( ) TJ , Junction Temperature ()Fig.5 Normalized V vs T Fig.6 Normalized R vs T GS(th)

AGM30P25MBQTable 2. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250A -30 ---- VZero Gate Voltage Drain Current V =-30V,V =0V -1DS GSI -- -- ADSSGate-Body Leakage Current V =20V,V =0V 100GS DSI -- -- nAGSSV Gate Threshold Voltage V

AGM308SFig.1 Power Dissipation Fig.2 Typical output CharacteristicsV =10VGSV =4.5VGSFig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain CurrentFig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperaturewww.agm-mos.com 3 VER2.71AGM308SFig.7 Switching Time Measurement Circuit Fig.8 Gate Charge WaveformFig.9 Switching Tim

AGM30P05AP General DescriptionThe AGM30P05AP combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryprotection applications.BVDSS RDSON ID Features-30V 5.5m -60AAdvance high cell density Trench technology Low R to minimize conductive lossD

AGM304AP General DescriptionThe AGM304AP combines advanced trenchProduct SummaryMOSFETtechnology with a low resistance packageto provideextremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.30V 3.8m 40A FeaturesAdvance high cell density Trench technology PDFN3.3*3.3 Pin ConfigurationLow R to mi

AGM30P20MCharacteristics Curve Typ. output characteristics Typ. drain-source on resistance -I =f(-V ) R =f(-I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistance -I =f(-V ) R = f(T ); I =-8A; V =-10V D GS DS(on) j D GSwww.agm-mos.com 3 VER2.7AGM30P20MGate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA -V =f(T ); I =-2

AGM30P110DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -30 -- -- VGS DZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM308ATypical Performance Characteristics Figure 2: Typical Transfer CharacteristicsFigure1: Output CharacteristicsID (A)ID (A)10010010V8V80803.5V5V606040 403V1252520 20VGS=2.5VVGS(V)VDS(V)0 00 2.0 4.0 6.0 8.0 10.00 1 2 3 4 5 6Figure 3:On-resistance vs. Drain Current Figure 4: Body Diode CharacteristicsIS(A)RDS(ON) (m)1410

AGM30P35S General DescriptionProduct SummaryThe AGM30P35S combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 34.5m -6Aprotection applications.SOP8 Pin Configuration Features Advance high cell density Trench technologyR to minimize conduct

AGM30P35M General DescriptionProduct SummaryThe AGM30P35M combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 33m -5.4Aprotection applications. FeaturesSOP8 Pin Configuration Advance high cell density Trench technologyR to minimize conduct

AGM30P100DTypical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature (C) Fig1. Typical Output Characteristics Fig2. -V Gate -Source Voltage Vs.Tj GS(TH) -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature (C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source Vo

AGM306DTest Circuit1) EAS Test Circuits2) Gate Charge Test Circuit:3) Switch Time Test Circuitwww.agm-mos.com 3 VER2.71AGM306DTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)Figure 1. Output Characteristics Figure 2. Transfer CharacteristicsVDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V)Figure 3. Max BV vs Junction Temperature Figure 4. Drain Curren

AGM30P25APTable 2. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250A -30 ---- VZero Gate Voltage Drain Current V =-30V,V =0V -1DS GSI -- -- ADSSGate-Body Leakage Current V =20V,V =0V 100GS DSI -- -- nAGSSV Gate Threshold Voltage V

AGM306MBQTable 3. Electrical Characteristics (T =25 unless otherwise noted)J Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V

AGM3045A General DescriptionProduct SummaryThe AGM3045A combines advanced trench MOSFETtotechnology with a low resistance package provideextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal load switch and battery protectionforapplications.30V 4.6m 80A FeaturesAdvance high cell density Trench technologyPDFN5*6 Pin ConfigurationLow R to mini

AGM306C General DescriptionProduct SummaryThe AGM306C combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)This device is ideal BVDSS RDSON IDfor load switch and batteryprotection applications.30V 5.7m 60A FeaturesAdvance high cell density Trench technologyTO-220 Pin Configuration Low R to minimize c

AGM304A General DescriptionProduct SummaryThe AGM304A combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.30V 2.8m 100A FeaturesPDFN5*6 Pin ConfigurationAdvance high cell density Trench technologyLow R to minimi

AGM306MNA General DescriptionProduct SummaryThe AGM306MNA combines advanced trenchMOSFET technology with a low resistance packageto provideextremely low R . This device is idealDS(ON)BVDSS RDSON IDswitch and battery protection applications.for load Features30V 6.8m 40AAdvance high cell density Trench technologyQFN5*6 Pin Configuration Low R to minim

AGM308MARTable 3. N- Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold V

AGM303MNAV =10VGSV =4.5VGSFig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain CurrentFig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperaturewww.agm-mos.com 3 VER2.5AGM303MNAFig.9 Switching Time Measurement Circuit Fig.10 Gate Charge WaveformFig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveformwww.agm-mos.c

AGM307MNQTypical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature (C) Fig1. Typical Output Characteristics Fig2. Threshold Voltage Vs. Temperature VGS, Gate -Source Voltage (V) Tj - Junction Temperature (C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Temperature VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage

AGM30P100ATypical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature (C) Fig1. Typical Output Characteristics Fig2. -V Gate -Source Voltage Vs.Tj GS(TH) -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature (C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source Vo

AGM30P85DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A -30 -- -- VGS DDSSZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1.0 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100V Gate Threshold Voltage V

AGM303APTypical CharacteristicsVDS, Drain -Source Voltage (V) Tj - Junction Temperature (C)Fig1. Typical Output Characteristics Fig2. V Gate -Source Voltage Vs.TjGS(TH)VGS, Gate -Source Voltage (V) Tj - Junction Temperature (C)Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. TjVSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V)Fig5. Typica

AGM3015DTypical Electrical and Thermal Characteristics (Curves)Vds Drain-Source Voltage (V) TJ-Junction Temperature() Figure 1 Output Characteristics Figure 4 Rdson-JunctionTemperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figure 6

AGM3015ATypical Electrical & Thermal Characteristics150 30VGS = 10VVGS = 3.5VVDS = 5.0VVGS = 5.0VVGS = 4.5V120 24VGS = 4.0VTJ = 125C90 1860 12VGS = 3.0VTJ = 25C30 6VGS = 2.7VVGS = 2.5V0 00 0.6 1.2 1.8 2.4 3 1 1.5 2 2.5 3 3.5VDS (V) VGS (V)Figure 1: Saturation Characteristics Figure 2: Transfer Characteristics4 2.53.2 2VGS = 10VID = 20AVG

AGM308MBPTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current 100VGS(th) Gate Threshold Voltage V =V

AGM307MBPTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current 100VGS(th) Gate Threshold Voltage V =V

AGM30P18S General DescriptionProduct SummaryThe AGM30P18S combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.-30V 7.0m -17A FeaturesAdvance high cell density Trench technologySOP8 Pin Configuration Low R to minimi

AGM30P35AP General DescriptionProduct SummaryThe AGM30P35AP combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 34.5m -16Aprotection applications.PDFN3.3*3.3 Pin Configuration Features Advance high cell density Trench technologyR to minimi

AGM304S General DescriptionThe AGM304S combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.30V 5.2m 17A FeaturesAdvance high cell density Trench technologySOP-8 Pin ConfigurationLow R to minimize

AGM30P08APP- Channel Typical CharacteristicsTC=25impulse=250uS-4.5V-6V-10V-3.5V25-3V-2.5 V-Vds Drain-Source Voltage (V)-Vgs Gate-Source Voltage (V)Figure 1. On-Region Characteristics Figure 2. Transfer CharacteristicsNoteTJ=25VGS= 0V25VGS= -4.5VVGS= -10V-ID - Drain Current (A) -VF ,Forward Voltage (V)Figure 3. On-Resistance Variation vs F

AGM301C1 General DescriptionThe AGM301C1 combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features 30V 1.5m 170AAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to minim

AGM3005A General DescriptionProduct SummaryThe AGM3005A combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)This device is ideal BVDSS RDSON IDfor load switch and batteryprotection applications.30V 0.5m 316A FeaturesAdvance high cell density Trench technologyPDFN5*6 Pin Configuration Low R to minimi

AGM30P20DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -30 -- -- VGS DZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM30P08DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A -30 -- -- VGS DDSSZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1.0 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100V Gate Threshold Voltage V

AGM30P25M General DescriptionProduct SummaryThe AGM30P25M combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 22m -8Aprotection applications.SOP8 Pin Configuration Features Advance high cell density Trench technologyR to minimize conductiv

AGM304AP-BTYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1On-Region Characteristics (Note E) Figure 4: On-Resistance vs. Junction Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5: On-Resistance vs. Gate-Source Figure 6: Body-Diode Characteristics (Note E)Voltage (Note E) www.agm

AGM30P10SR General DescriptionProduct SummaryThe AGM30P10SR combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.-30V 9.3m -15A FeaturesAdvance high cell density Trench technologySOP8 Pin Configuration Low R to mini

AGM30P25D General DescriptionProduct SummaryThe AGM30P25D combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 21m -12Aprotection applications.TO-252 Pin Configuration Features Advance high cell density Trench technologyR to minimize conduc

AGM30P110ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -30 -- -- VGS DZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM30P16SCissVgsCossCrssQgVdsFig.3 Power Dissipation Derating Curve Fig.4 Typical output CharacteristicsV =-10VGSV =-4.5VGSFig.5 Threshold Voltage V.S Junction Temperature Fig.6 Resistance V.S Drain Currentwww.agm-mos.com 3 VER2.68AGM30P16SFig.9 Switching Time Measurement Circuit Fig.10 Gate Charge WaveformFig.11 Switching Time Measurement Circuit Fig.12 Gate

AGM30P55D1 General DescriptionProduct SummaryThe AGM30P55D1 combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.-30V 6.5m -65A FeaturesAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to mi

AGM30P12MFig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 VGS=-10V 1 40 0.8 30 VGS=-4.5V 0.6 20 0.4 10 0.2 0 0 0.5 1 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature (C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Junction Temperature 30 -50 50 150 0 20 -0.

AGM30P14MBP -Vds Drain-Source Voltage (V) TJ-Junction Temperature() Figure 7 Capacitance vs Vds Figure 9 Power De-rating -Vds Drain-Source Voltage (V) TJ-Junction Temperature() Figure 8 Safe Operation Area Figure 10 ID Current Derating Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.agm-mos.com 4 VER2.68C Capacitance (pF)Po

AGM30P10K Typical CharacteristicsPower Capability Current Capability 60 5550504540403530302520201510105 TC=25oC,VG= -10VTC=25oC0 00 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160Tmp Mounting Point Temp. ( Tmp Mounting Point Temp. (C) C) Safe Operating Area Transient Thermal Impedance 100 21Duty = 0.51ms0.2

AGM30P20APCharacteristics Curvewww.agm-mos.com 3 VER2.68AGM30P20APFigure7 Safe Operation AreaFigure8 Normalized Maximum Transient Thermal Impedancewww.agm-mos.com 4 VER2.68AGM30P20APDimensionsPDFN3.3*3.3MILLIMETERDSYMBOLMIN Typ. MAXA 0.700 0.800 0.900bA1 0.152REF.A2 0~0.05D 3.000 3.100 3.200D1 2.300 2.450 2.600D1E 2.900 3.000 3.100E1 3.1

AGM308AP General DescriptionProduct SummaryThe AGM308AP combines advancedtrenchMOSFET technology with a low resistanceto providepackage extremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and battery30V 6.2m 40Aprotection applications. FeaturesPDFN3.3*3.3 Pin ConfigurationAdvance high cell density Trench technology Low R to mi

AGM305MA General DescriptionProduct SummaryThe AGM305MA combines advanced trenchMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)BVDSS RDSON IDswitch and batteryThis device is ideal for loadprotection applications.30V 4.6m 50A FeaturesPDFN5*6 Pin ConfigurationAdvance high cell density Trench technology Low R to minim

AGM304D Typical Characteristics TJ = 25C, unless otherwise noted 120 12010V 8V 1001006V VDS = 15V 4.5V 4V 80803.5V 60604040C 20 TJ = 12520TJ = 25C 000 1 2 3 4 50 1 2 3 4 5 6VDS (Volts) VGS (Volts) Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics 10000109TJ = 25C 8Ciss 10007VGS = 4.5V Co

AGM30P10APP- Channel Typical Characteristics-3VTC=25impulse=250uS-3.5V -4.5V 25-6V-10V-2.5VVds Drain-Source Voltage (V) -Vgs Gate-Source Voltage (V)Figure 1. On-Region Characteristics Figure 2. Transfer CharacteristicsVGS= 0VNoteTJ=25VGS=-4.5V25VGS=-10V-V F ,Forward Voltage [V]-I D - Drain Current (A)Figure 4. Body Diode Forward Voltage F

AGM306MAFig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2501V =10V GS0.8V =4.5V GS250.60.40.200 0.5 1 1.5 20Drain-Source voltage (V)0 50 100 150 200Temperature (C)Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current 2.52021.51010.500-50 50 1500 10 20 30Junction Tempe

AGM30P18ETable 3. Electrical Characteristics (TA=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A -30 -- -- VGS DDSSZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltag

AGM3012AP-CPTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 35 -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltag

AGM30P16DTypical Electrical and Thermal Characteristics (Curves)-Vds Drain-Source Voltage (V) TJ-Junction Temperature() Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge -ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figu

AGM30P05D General DescriptionThe AGM30P05D combines advanced trenchMOSFET technology with a low resistance packageProduct Summaryto provide extremely low R .DS(ON)This device is idealfor load switch and batteryprotection applications.BVDSS RDSON ID FeaturesAdvance high cell density Trench technology-30V 5.5m -75A Low R to minimize conductive lossDS(

AGM306ATable 3. Electrical Characteristics (T =25 unless otherwise noted)J Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage V

AGM30P05A General DescriptionThe AGM30P05A combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features-30V 5.5m -75AAdvance high cell density Trench technologyPDFN5*6 Pin Configuration Low R to mi

AGM303AV =10VGSV =4.5VGSFig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain CurrentFig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperaturewww.agm-mos.com 3 VER2.72AGM303AFig.9 Switching Time Measurement Circuit Fig.10 Gate Charge WaveformFig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveformwww.agm-mos.com

AGM306MBPTable 3. Electrical Characteristics (T =25 unless otherwise noted)J Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V

AGM30P08A General DescriptionThe AGM30P08A combines advanced trenchProduct SummaryMOSFET technology with a low resistanceto provide extremely low R .package DS(ON)BVDSS RDSON IDThis device isideal for load switch and batteryprotection applications.-30V 7.0m -60A Features Advance high cell density Trench technology PDFN5*6 Pin ConfigurationR to minimize con

AGM30P10S General DescriptionProduct SummaryThe AGM30P10S combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.-30V 12m -14A FeaturesAdvance high cell density Trench technologySOP8 Pin Configuration Low R to minimiz

AGM30P55D General DescriptionThe AGM30P55D combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryprotection applications. BVDSS RDSON ID Features-30V 5m -65AAdvance high cell density Trench technology Low R to minimize conductive lossDS(ON)

AGM30P16AP General DescriptionThe AGM30P16AP combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features-30V 11m -21AAdvance high cell density Trench technologyPDFN3.3*3.3 Pin Configuration Low R

AGM30P35D General DescriptionProduct SummaryThe AGM30P35D combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 36.5m -20Aprotection applications.TO-252 Pin Configuration Features Advance high cell density Trench technologyR to minimize cond

AGM30P55AFig.1 Power Dissipation Derating Curve Fig.2 Typical output CharacteristicsV =-10VGSV =-4.5VGSFig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain CurrentFig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperaturewww.agm-mos.com 3 VER2.68AGM30P55AFig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform

AGM303DV =10VGSV =4.5VGSFig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain CurrentFig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperaturewww.agm-mos.com 3 VER2.72AGM303DFig.9 Switching Time Measurement Circuit Fig.10 Gate Charge WaveformFig.11 Avalanche Measurement Circuit Fig.12 Avalanche Waveformwww.agm-mos.com

AGM30P20S General DescriptionProduct SummaryThe AGM30P20S combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotectionapplications.-30V 15.5m -11A Features Advance high cell density Trench technology SOP8 Pin ConfigurationLow R to minimize co

AGM301A1Table 3. Electrical Characteristics (T =25 unless otherwise noted)J Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage

AGM305Dwww.agm-mos.com 3 VER2.71AGM305DTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics VDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V) Figure 3. Max BVDSS vs Junction Temperature Figure 4. Drain Current TJ-Junction Temperature() TJ-Junction Temperature() Figure 5. VGS(th) vs Juncti

AGM304A-BTYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1On-Region Characteristics (Note E) Figure 4: On-Resistance vs. Junction Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5: On-Resistance vs. Gate-Source Figure 6: Body-Diode Characteristics (Note E)Voltage (Note E) www.agm-

AGM308SRFig.1 Power Dissipation Fig.2 Typical output Characteristics 1.2 20011500.8V =10V GS1000.6V =4.5V GS0.4500.200 0.5 1 1.5 20Drain-Source voltage (V)0 50 100 150 200Temperature (C)Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current 2.5 65241.53120.51000 50 100-50 50 150Drain Curren