AGMH612D - аналоги, параметры транзистора - Справочник транзисторов

AGMH612D даташит

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AGMH612D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,

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AGMH614D General Description Product Summary The AGMH614D combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 11m 50A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize

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agmh614h.pdf pdf_icon

AGMH614H General Description Product Summary The AGMH614H combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 11m 50A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to minimize

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agmh614c.pdf pdf_icon

AGMH614C Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,

Другие MOSFET... AGM308MA , AGM308MAR , AGM308MBP , AGMH403A1 , AGMH605C , AGMH606C , AGMH606H , AGMH6080H , 2SK3878 , AGMH614C , AGMH614D , AGMH614H , AGMH70N70C , AGMH70N70D , AGMH70N90C , AGMH70N90H , AGML315ME .