AGM4025D - Даташиты. Аналоги. Основные параметры

AGM4025D General DescriptionProduct SummaryThe AGM4025D combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDdevice is idealThis for load switch and batteryprotection applications.40V 2.2m 125A FeaturesAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to minimi

AGM4025QN-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.81.81.41.41.010.60.60.2 0.2-50 0 50 100 150 -50 0 50 100 150TJ ,Junction Temperature ( ) TJ , Junction Temperature ()Fig.5 Normalized V vs T Fig.6 Normalized R vs T

AGM4025ATypical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized V vs T Fig.6 Normalized R vs T GS(th) J DSON Jwww.agm-mos.com 3 VER2.68AGM4025AFig.7 Capacitance Fig.8 Safe Operating Area 1DUTY=0.50.20.10.10.050.02PDM TON0.01

AGM402CTypical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature (C) Fig1. Typical Output Characteristics Fig2. VGS(TH) Gate -Source Voltage Vs. Tj VGS, Gate -Source Voltage (V) Tj - Junction Temperature (C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Temperature VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V)

AGM402C1 General DescriptionProduct SummaryThe AGM402C1 combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.40V 2.3m 170A FeaturesAdvance high cell density Trench technologyTO-220 Pin Configuration Low R to minimiz

AGM402A1Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature (C) Fig1. Typical Output Characteristics Fig2. VGS(TH) Gate -Source Voltage Vs. Tj VGS, Gate -Source Voltage (V) Tj - Junction Temperature (C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Temperature VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V

AGM402H General DescriptionProduct SummaryThe AGM402H combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and battery40V 2.6m 170Aprotection applications. Features TO-263 Pin ConfigurationAdvance high cell density Trench technology Low R to minimize

AGM402D General DescriptionProduct SummaryThe AGM402D combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and battery40V 2.4m 125Aprotection applications.TO-252 Pin Configuration FeaturesAdvance high cell density Trench technology Low R to minimize

AGM402ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 -- -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage V =

AGM402QTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 -- -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage V =