AGM60P30A - описание и поиск аналогов

AGM60P30A General Description Product Summary The AGM60P30A combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID protection This device is ideal for load switch and battery applications. -60V 50m -30A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to minimize c

AGM60P30AP General Description Product Summary The AGM60P30AP combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -60V 40m -30A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to mini

AGM60P30C Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 40 35 VGS= -5,-6,-7,-8,-9,-10V 35 -4V 30 30 VGS= -4.5V 25 25 20 20 15 10 VGS= -10V 15 5 -3V 0 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 -VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage 60 1.8 IDS = -250 A ID

AGM60P30D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -60 -- -- V GS D Zero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage