AGM60P90A - Даташиты. Аналоги. Основные параметры

AGM60P90AFigure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area www.agm-mos.com 4 VER2.66AGM60P90ATest Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.agm-mos.com 5 VER2.66AGM60P90ADimensionsPDFN5*6D2DMILLIMETERSYMBOLMIN Typ. MAXA 0.

AGM60P90DTypical CharacteristicsFig-VDS, -Drain -Source Voltage (V)Tj - Junction Temperature (C)Fig1. Typical Output CharacteristicsFig2. Typical -V Gate -Source Voltage Vs. TjGS(TH)- - - -FigTj - Junction Temperature (C)-VGS, -Gate -Source Voltage (V)Fig4. Typical Normalized On-Resistance Vs. TjFig3. Typical Transfer Characteristics-ID, -Drain-Source Curre

AGM60P85EFigure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area www.agm-mos.com 4 VER2.65AGM60P85AP1) EAS Test Circuits 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.agm-mos.com 5 VER2.65AGM60P85ESOT23-3Marking Instructions:www.agm-mos.com 7 VER2.65AGM60P85EDisclaimer:Th

AGM60P20APTyp. output characteristics Typ. drain-source on resistance -I =f(-V ) R =f(-I ) D DS DS(on) D20030-10V-4.0V -4.5V25-5.0V15020-4.5V15-5.0V10 100-4.0V-10V50500 1 2 3 4 50 5 10 15 20-VDS[V]-ID[A]Typ. transfer characteristics Typ. forward transconductance -I =f(-V ) g =f(-I ) D GS fs D202015 1510 1055000 1 2 3 4 5

AGM60P06SP-Channel Typical Characteristics 16012ID=-3AVGS=-3V1012086VGS=-10V4 80VGS=-7VVGS=-5V2VGS=-4.5V0 400 0.5 1 1.5 2 2 4 6 8 10-VDS , Drain-to-Source Voltage (V) -VGS (V)Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source 1210ID=-3A108866TJ=150 TJ=254422000.2 0.4 0.6 0.8 1 0 5 10 15 20 25-V

AGM60P35FTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -60 -- -- VGS DZero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM60P14A General DescriptionThe AGM60P14A combines advanced trench MOSFETProduct Summaryto providetechnology with a low resistance packageextremely low RDS(ON)This device is ideal and batteryfor load switchBVDSS RDSON IDprotectionapplications.-60V 18m -52A Features Advance high cell density Trench technologyPDFN5*6 Pin ConfigurationLow R to minimize

AGM60P100ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -60 -- -- VGS DZero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM60P20D General DescriptionProduct SummaryThe AGM60P20D combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotectionapplications.-60V 57m -18A Features Advance high cell density Trench technology TO-252 Pin ConfigurationLow R to minimize co

AGM60P20R General DescriptionProduct SummaryThe AGM60P20R combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotectionapplications.-60V 65m -10A Features Advance high cell density Trench technology SOT-223-3L Pin ConfigurationLow R to minimiz

AGM60P85D Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON)www.agm-mos.com 3 VER2.65AGM60P85DFigure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area

AGM60P30AP General DescriptionProduct SummaryThe AGM60P30AP combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotectionapplications.-60V 40m -30A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin ConfigurationLow R to mini

AGM60P30CTypical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 40 35VGS= -5,-6,-7,-8,-9,-10V35-4V3030VGS= -4.5V252520201510VGS= -10V155 -3V0 100.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40-VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage 60 1.8IDS = -250AID

AGM60P14D General DescriptionProduct SummaryThe AGM60P14D combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal and batteryfor load switch-60V 18m -52Aprotectionapplications.TO-252 Pin Configuration Features Advance high cell density Trench technologyLow R to minimize

AGM60P14AP General DescriptionThe AGM60P14AP combines advanced trenchProduct SummarytoMOSFET technology with a low resistance packageprovideextremely low RDS(ON)This device is ideal and batteryfor load switchBVDSS RDSON IDprotectionapplications. Features-60V 18m -52A Advance high cell density Trench technologyPDFN3.3*3.3 Pin ConfigurationLow R to m

AGM60P30DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -60 -- -- VGS DZero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM60P40ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -60 -- -- VGS DZero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM60P30A General DescriptionProduct SummaryThe AGM60P30A combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDprotectionThis device is ideal for load switch and batteryapplications.-60V 50m -30A Features Advance high cell density Trench technology PDFN5*6 Pin ConfigurationLow R to minimize c

AGM60P85AP General DescriptionProduct SummaryThe AGM60P85AP combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -60V 80m -14Aprotection applications.PDFN3.3*3.3 Pin Configuration Features Advance high cell density Trench technologyR to minimize

AGM60P40DTypical Characteristics 3012ID=-12A1028VGS=-10V8VGS=-7V26VGS=-5V6VGS=-4.5V24422VGS=-3V20 200 0.25 0.5 0.75 1 2 4 6 8 10-VDS Drain-to-Source Voltage (V) -VGS (V)Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source 1210VDS=-20VID=-12A108866TJ=150 TJ=254422000 20 40 600.2 0.4 0.6 0.