AGM60P14D - аналоги, параметры транзистора - Справочник транзисторов

AGM60P14D даташит

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AGM60P14D General Description Product Summary The AGM60P14D combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch -60V 18m -52A protection applications. TO-252 Pin Configuration Features Advance high cell density Trench technology Low R to minimize

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AGM60P14A General Description The AGM60P14A combines advanced trench MOSFET Product Summary to provide technology with a low resistance package extremely low R DS(ON) This device is ideal and battery for load switch BVDSS RDSON ID protection applications. -60V 18m -52A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to minimize

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AGM60P14AP General Description The AGM60P14AP combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R DS(ON) This device is ideal and battery for load switch BVDSS RDSON ID protection applications. Features -60V 18m -52A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to m

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AGM60P100A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -60 -- -- V GS D Zero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage

Другие MOSFET... AGM609D , AGM609F , AGM609MNA , AGM609S , AGM60P06S , AGM60P100A , AGM60P14A , AGM60P14AP , AOD4184A , AGM60P20AP , AGM60P20D , AGM60P20R , AGM40P30A , AGM40P30AP , AGM40P30D , AGM40P35A , AGM40P35A-KU .