ZXM64N035L3. Аналоги и основные параметры

Наименование производителя: ZXM64N035L3

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 20 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 35 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 13 A

Электрические характеристики

Cossⓘ - Выходная емкость: 950 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm

Тип корпуса: TO220

Аналог (замена) для ZXM64N035L3

- подборⓘ MOSFET транзистора по параметрам

 

ZXM64N035L3 даташит

 ..1. Size:65K  diodes
 zxm64n035l3.pdf pdf_icon

ZXM64N035L3

ZXM64N035L3 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V RDS(on) = 0.060 ID = 13A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-r

 5.1. Size:100K  zetex
 zxm64n035gta.pdf pdf_icon

ZXM64N035L3

ZXM64N035G 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V RDS(on) = 0.050 ID = 6.7A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-r

 6.1. Size:331K  zetex
 zxm64n03xtc.pdf pdf_icon

ZXM64N035L3

ZXM64N03X 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.045 ID=5.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES MSOP8 Low on-resistance

 6.2. Size:331K  zetex
 zxm64n03xta.pdf pdf_icon

ZXM64N035L3

ZXM64N03X 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.045 ID=5.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES MSOP8 Low on-resistance

ПОКАЗАТЬ ЕЩЁ

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