AP2003 datasheet, подбор замены

 ..1. Size:1417K  allpower
 ap2003.pdf 

 9.1. Size:1742K  allpower
 ap200n04.pdf 

 9.2. Size:1738K  allpower
 ap200n04d.pdf 

 9.3. Size:1577K  cn apm
 ap200n15mp.pdf 

AP200N15MP 150V N-Channel Enhancement Mode MOSFET Description The AP200N15MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS D R

 9.4. Size:1629K  cn apm
 ap200n15tlg1.pdf 

AP200N15TLG1 150V N-Channel Enhancement Mode MOSFET Description The AP200N15TLG1 uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS D R

 9.5. Size:1341K  cn apm
 ap200n04tlg5.pdf 

AP200N04TLG5 40V N-Channel Enhancement Mode MOSFET Description The AP200N04TLG5 uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =200A DS D R

 9.6. Size:1438K  cn apm
 ap200n04nf.pdf 

AP200N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP200N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =200A DS D R

 9.7. Size:1498K  cn apm
 ap200n12p ap200n12t.pdf 

AP200N12PIT 120V N-Channel Enhancement Mode MOSFET Description The AP200N12P/T uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V Type 135V I =200A DS D R

 9.8. Size:1458K  cn apm
 ap200n10mp.pdf 

AP200N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP200N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =200A DS D R