AP50P20K - аналоги, параметры транзистора - Справочник транзисторов

AP50P20K - Аналоги. Основные параметры

   Наименование производителя: AP50P20K
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 59 ns
   Cossⓘ - Выходная емкость: 505 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
   Тип корпуса: TO252

Аналог (замена) для AP50P20K

- подбор ⓘ MOSFET транзистора по параметрам

AP50P20K технические параметры

..1. Size:634K allpower
ap50p20k.pdf pdf_icon

7.1. Size:954K allpower
ap50p20q.pdf pdf_icon

9.1. Size:164K ape
ap50pn520r.pdf pdf_icon

AP50PN520R Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 0.52 Simple Drive Requirement ID 12A G RoHS Compliant & Halogen-Free S Description AP50PN520 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

9.2. Size:800K allpower
ap50p06k.pdf pdf_icon

9.3. Size:738K cn apm
ap50p10d.pdf pdf_icon

AP50P10D -100V P-Channel Enhancement Mode MOSFET Description The AP50P10D uses advanced trench technology and design to provide excellent R with low gat DS(ON) e charge. It can be used in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-50A DS D R

9.4. Size:1276K cn apm
ap50p10nf.pdf pdf_icon

AP50P10NF -100V P-Channel Enhancement Mode MOSFET Description The AP50P10NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-50A DS D R

9.5. Size:2802K cn apm
ap50p02df.pdf pdf_icon

AP50P02DF -20V P-Channel Enhancement Mode MOSFET Description The AP50P02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-50A DS D 6.8m ) R

9.6. Size:1281K cn apm
ap50p03d.pdf pdf_icon

AP50P03D -30V P-Channel Enhancement Mode MOSFET Description The AP50P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS D R

9.7. Size:1388K cn apm
ap50p03df.pdf pdf_icon

AP50P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP50P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50 A DS D R

9.8. Size:1674K cn apm
ap50p04d.pdf pdf_icon

AP50P04D -40V P-Channel Enhancement Mode MOSFET Description The AP50P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-50 A DS D R

9.9. Size:1489K cn apm
ap50p04df.pdf pdf_icon

AP50P04DF -40V P-Channel Enhancement Mode MOSFET Description The AP50P04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-50 A DS D R

9.10. Size:1575K cn apm
ap50p06p ap50p06t.pdf pdf_icon

AP50P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP50P06P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-50A DS D R

9.11. Size:1704K cn apm
ap50p10p.pdf pdf_icon

AP50P10P -100V P-Channel Enhancement Mode MOSFET Description The AP50P10P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-50 A DS D R

9.12. Size:1629K cn apm
ap50p03nf.pdf pdf_icon

AP50P03NF 30V P-Channel Enhancement Mode MOSFET Description The AP50P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS D R

Другие MOSFET... AP4946S , AP5040QD , AP50N04GD , AP50N04K , AP50N04Q , AP50N04QD , AP50N06K , AP50P06K , IRF1407 , AP50P20Q , AP5N10M , AP5N10S , AP5N20K , AP5N50K , AP6007S , , .