AP90N04Q datasheet, подбор замены

 ..1. Size:580K  allpower
 ap90n04q.pdf 

 7.1. Size:2114K  allpower
 ap90n04k.pdf 

 7.2. Size:1825K  allpower
 ap90n04g.pdf 

 8.1. Size:588K  1
 ap90n03q.pdf 

 8.2. Size:606K  allpower
 ap90n03gd.pdf 

 8.3. Size:588K  allpower
 ap90n03q.pdf 

 8.4. Size:1234K  cn apm
 ap90n02d.pdf 

AP90N02D 20V N-Channel Enhancement Mode MOSFET Description The AP90N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =90A DS D R

 8.5. Size:2408K  cn apm
 ap90n06d.pdf 

AP90N06D 60V N-Channel Enhancement Mode MOSFET Description The AP90N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R

 8.6. Size:1744K  cn apm
 ap90n08nf.pdf 

AP90N08NF 85V N-Channel Enhancement Mode MOSFET Description The AP90N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =95A DS D R

 8.7. Size:1413K  cn apm
 ap90n06p ap90n06t.pdf 

AP90N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP90N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R

 8.8. Size:1327K  cn apm
 ap90n06f.pdf 

AP90N06F 60V N-Channel Enhancement Mode MOSFET Description The AP90N06F uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R

 8.9. Size:1655K  cn apm
 ap90n02nf.pdf 

AP90N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP90N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =90 A DS D R