AOTF11S60L - описание и поиск аналогов

 

Аналоги AOTF11S60L. Основные параметры


   Наименование производителя: AOTF11S60L
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 29 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 37.3 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.399 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для AOTF11S60L

   - подбор ⓘ MOSFET транзистора по параметрам

 

AOTF11S60L даташит

 ..1. Size:579K  aosemi
aot11s60l aob11s60l aotf11s60l aotf11s60.pdfpdf_icon

AOTF11S60L

AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 TM 600V 11A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60L & AOB11S60L & AOTF11S60L & AOTF11S60 have been fabricated using the advanced IDM 45A aMOSTM high voltage process that is designed to deliver high RDS(ON),max 0.399W levels of performance and robustness in switching applications. Qg,typ 11

 5.1. Size:292K  aosemi
aotf11s60.pdfpdf_icon

AOTF11S60L

AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 11nC By providin

 5.2. Size:253K  inchange semiconductor
aotf11s60.pdfpdf_icon

AOTF11S60L

isc N-Channel MOSFET Transistor AOTF11S60 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.399 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 6.1. Size:299K  aosemi
aotf11s65.pdfpdf_icon

AOTF11S60L

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By provi

Другие MOSFET... AOK033V120X2 , AOK033V120X2Q , AOK065V120X2 , AOK065V65X2 , AOK500V120X2 , AOM033V120X2 , AOM065V120X2Q , AONV070V65G1 , 4435 , AOTF27S60L , AOTF950A70L , , , , , , .

History: AONV070V65G1

 

 

 


 
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