ZVN4525E6. Аналоги и основные параметры
Наименование производителя: ZVN4525E6
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 40 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.23 A
Электрические характеристики
Cossⓘ - Выходная емкость: 72 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 9 Ohm
Тип корпуса: SOT26
Аналог (замена) для ZVN4525E6
- подборⓘ MOSFET транзистора по параметрам
ZVN4525E6 даташит
zvn4525e6.pdf
ZVN4525E6 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT23-6 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and gener
zvn4525e6ta zvn4525e6tc.pdf
ZVN4525E6 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT23-6 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and gener
zvn4525g.pdf
ZVN4525G 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT223 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general
zvn4525gta zvn4525gtc.pdf
ZVN4525G 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT223 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general
Другие MOSFET... ZXMN6A25G , ZXMN6A25K , ZXMN6A25N8 , ZXMN7A11G , ZXMN7A11K , BSS123Z , BSS123W , ZVN4424Z , 2N60 , ZVN4525G , ZVN4525Z , ZVNL120G , ZXMN0545G4 , ZXMN10A07F , ZXMN10A07Z , ZXMN10A08DN8 , ZXMN10A08E6 .
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Список транзисторов
Обновления
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