Справочник MOSFET. ZVN4525E6

 

ZVN4525E6 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZVN4525E6
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 40 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.23 A
   Cossⓘ - Выходная емкость: 72 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 9 Ohm
   Тип корпуса: SOT26
     - подбор MOSFET транзистора по параметрам

 

ZVN4525E6 Datasheet (PDF)

 ..1. Size:431K  diodes
 zvn4525e6.pdf pdf_icon

ZVN4525E6

ZVN4525E6250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener

 0.1. Size:430K  diodes
 zvn4525e6ta zvn4525e6tc.pdf pdf_icon

ZVN4525E6

ZVN4525E6250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener

 7.1. Size:414K  diodes
 zvn4525g.pdf pdf_icon

ZVN4525E6

ZVN4525G250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT223impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general

 7.2. Size:412K  diodes
 zvn4525gta zvn4525gtc.pdf pdf_icon

ZVN4525E6

ZVN4525G250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT223impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general

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History: AON6716 | SIHFI730G | MTB1D7N03ATH8 | 2SK610 | 2SK2525-01 | AP55T10GH-HF | DAMI500N60

 

 
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