ZXMN10A08DN8100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 100V; RDS(ON) = 0.25 ID = 2.1ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SO8FEATURES Low on-resistanc

A Product Line ofDiodes Incorporated ZXMN10A08E6100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceMax ID Fast switching speed V(BR)DSS Max RDS(on) TA = 25C Totally Lead-Free & Fully RoHS compliant (Note 1) (Note 5) Halogen and Antimony Free. Green Device (Note 2) 250m @ VGS = 10V 1.9A Qualified t

A Product Line ofDiodes IncorporatedZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Qualified to AEC-Q101 Standards for High Reliability 100V 0.25 1.9AMechanical Data Case: SOT23-6

ZXMN10A08G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 2.91000.300 @ VGS= 6V 2.6DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementGapplications.FeaturesS Low on-r

SMD Type MOSFETN-Channel MOSFETZXMN10A08G (KXMN10A08G)Unit:mmSOT-2236.500.23.000.1 Features4 VDS (V) = 100V ID = 2.9 A (VGS = 10V) RDS(ON) 250m (VGS = 10V)1 2 3D RDS(ON) 300m (VGS = 6V)0.2502.30 (typ)Gauge Plane1.GateG 2.Drain0.700.13.SourceS 4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25Paramete