Справочник MOSFET. ZXMN10A09K

 

ZXMN10A09K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMN10A09K
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 10.1 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 7.7 A
   Общий заряд затвора (Qg): 17.2 nC
   Выходная емкость (Cd): 1313 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.1 Ohm
   Тип корпуса: TO252 DPAK

 Аналог (замена) для ZXMN10A09K

 

 

ZXMN10A09K Datasheet (PDF)

 ..1. Size:655K  diodes
zxmn10a09k.pdf

ZXMN10A09K
ZXMN10A09K

A Product Line ofDiodes IncorporatedZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low input capacitance ID V(BR)DSS RDS(on) Low on-resistance TA = 25C Fast switching speed 85m @ VGS = 10V 7.7A Green Component and RoHS compliant (Note 1) 100V

 ..2. Size:655K  diodes
zxmn10a09k zxmn10a09ktc.pdf

ZXMN10A09K
ZXMN10A09K

A Product Line ofDiodes IncorporatedZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low input capacitance ID V(BR)DSS RDS(on) Low on-resistance TA = 25C Fast switching speed 85m @ VGS = 10V 7.7A Green Component and RoHS compliant (Note 1) 100V

 6.1. Size:174K  diodes
zxmn10a08e6ta zxmn10a08e6tc.pdf

ZXMN10A09K
ZXMN10A09K

A Product Line ofDiodes Incorporated ZXMN10A08E6100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceMax ID Fast switching speed V(BR)DSS Max RDS(on) TA = 25C Totally Lead-Free & Fully RoHS compliant (Note 1) (Note 5) Halogen and Antimony Free. Green Device (Note 2) 250m @ VGS = 10V 1.9A Qualified t

 6.2. Size:265K  diodes
zxmn10a07fta zxmn10a07ftc.pdf

ZXMN10A09K
ZXMN10A09K

A Product Line ofDiodes IncorporatedZXMN10A07F100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE Product Summary Features Low On-ResistanceID Low ThresholdBVDSS RDS(ON) Max TA = +25C (Note 6) Fast Switching Speed 700m @ VGS = 10V 0.76A Low Gate Drive 100V 900m @ VGS = 6V 0.67A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Hal

 6.3. Size:330K  diodes
zxmn10a07zta.pdf

ZXMN10A09K
ZXMN10A09K

A Product Line of Diodes IncorporatedZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-ResistanceID max Low ThresholdV(BR)DSS RDS(on) Max TA = 25C (Note 6) Fast Switching Speed 700m @ VGS = 10V 1.4A Low Gate Drive 100V 900m @ VGS = 6V 1.2A Totally Lead-Free & Fully RoHS compliant (Not

 6.4. Size:186K  diodes
zxmn10a07z.pdf

ZXMN10A09K
ZXMN10A09K

ZXMN10A07Z100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=100V : RDS(on)=0.7 ; ID=1.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage power management applications.FEATURESSOT89 Low on-resistance

 6.5. Size:234K  diodes
zxmn10a08e6.pdf

ZXMN10A09K
ZXMN10A09K

A Product Line ofDiodes IncorporatedZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Qualified to AEC-Q101 Standards for High Reliability 100V 0.25 1.9AMechanical Data Case: SOT23-6

 6.6. Size:179K  diodes
zxmn10a08dn8.pdf

ZXMN10A09K
ZXMN10A09K

ZXMN10A08DN8100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 100V; RDS(ON) = 0.25 ID = 2.1ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SO8FEATURES Low on-resistanc

 6.7. Size:269K  diodes
zxmn10a07f.pdf

ZXMN10A09K
ZXMN10A09K

ZXMN10A07F100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 100V : RDS(on)= 0.7 ID= 0.8ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage power management applications.FEATURESSOT23 Low on-resistance

 6.8. Size:441K  diodes
zxmn10a08g.pdf

ZXMN10A09K
ZXMN10A09K

ZXMN10A08G100V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 2.91000.300 @ VGS= 6V 2.6DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementGapplications.FeaturesS Low on-r

 6.9. Size:1582K  kexin
zxmn10a08g.pdf

ZXMN10A09K
ZXMN10A09K

SMD Type MOSFETN-Channel MOSFETZXMN10A08G (KXMN10A08G)Unit:mmSOT-2236.500.23.000.1 Features4 VDS (V) = 100V ID = 2.9 A (VGS = 10V) RDS(ON) 250m (VGS = 10V)1 2 3D RDS(ON) 300m (VGS = 6V)0.2502.30 (typ)Gauge Plane1.GateG 2.Drain0.700.13.SourceS 4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25Paramete

 6.10. Size:744K  cn vbsemi
zxmn10a07zta.pdf

ZXMN10A09K
ZXMN10A09K

ZXMN10A07ZTAwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.102 at VGS = 10 V 4.20.120 at VGS = 6 V 100 3.8 2.9 nC0.125 at VGS = 4.5 V 3.6APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVs

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