ASDM100N34KQ datasheet, подбор замены

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 asdm100n34kq.pdf 

ASDM100N34KQ 100V N-Channel MOSFET General Features Product Summary Advanced Trench Technology V 100 V DSS Lead free product is acquired 24 Provide Excellent RDS(ON) and Low Gate Charge R m DS(ON)-Typ I 34 A D Application Load Switch PWM Application Power management D G S TO-252 Absolute Maximum Ratings (T =25 unless otherwise specified) C S

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 asdm100n15kq.pdf 

ASDM100N15KQ 100V N-CHANNEL MOSFET Features Product Summary 100V,15A R =95m (Typ.) @ V = 10V DS(ON) GS V DS 100 V R =100m (Typ.) @ V = 4.5V DS(ON) GS Low Total Gate Charge R DS(on),TYP@ VGS=10 V 95 m Low Reverse Transfer Capacitance Improved dv/dt Capability 15 A ID Fast Switching Speed Application Uninterruptible Power Su

 7.1. Size:568K  ascend
 asdm100r750pkq.pdf 

ASDM100R750PKQ -100V P-Channel MOSFET General Features Product Summary Split gate trench MOSFET technology V DS -100 V Low RDS(on) & FOM Extremely low switching loss R DS(on),Typ@ VGS=-10 V 75 m Excellent stability and uniformity I D -20 A Application Power management Portable equipment D G S P-channel TO-252 Absolute Maximum Ratings (T =25 unless

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 asdm100r066nq.pdf 

ASDM100R066NQ 100V N-CHANNEL MOSFET Features Product Summary Advanced Trench MOS Technology 100 V Low Gate Charge VDS RDS(on),Typ 5.9 @ VGS=10V m Low R DS(ON) ID 68 A 100% EAS Guaranteed Green Device Available Applications Power Management in Desktop Computer or DC/DC Converters. Isolated DC/DC Converters in Telecom and Industrial. D G S

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 asdm100r160nkq.pdf 

ASDM100R160NKQ 100V N-Channel Power MOSFET General Description Product Summary Low R & FOM DS(on) Extremely low switching loss Excellent stability and uniformity V DS 100 V Fast switching and soft recovery R DS(on),Typ@ VGS=10 V 14 m Applications I D A 45 Power switching application Hard switched and high frequency circuits Uninterruptible

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 asdm100r090np.pdf 

ASDM100R090NP 100V N-CHANNEL MOSFET Product Summary Features High Speed Power Switching, Logic Level VDS 100 V Enhanced Body diode dv/dt capability RDS(on),typ m VGS=10V 9 Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested ID 75 A Lead Free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circu

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 asdm100r045nq.pdf 

ASDM100R045NQ 100V N-Channel MOSFET General Features Product Summary High density cell design for ultra low Rdson Fully characterized avalanche voltage and current V DS 100 V Good stability and uniformity with high EAS R DS(on),TYP@ VGS=10 V 3.7 m Excellent package for good heat dissipation I D 90 A Special process technology for high ESD capability Applicatio